IRLR024NPBF

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

55 V

Id - Continuous Drain Current:

17 A

Rds On - Drain-Source Resistance:

110 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

16 V

Qg - Gate Charge:

10 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

38 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

2.3 mm

Length:

6.5 mm

Transistor Type:

1 N-Channel

Type:

HEXFET Power MOSFET

Width:

6.22 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

8.3 S

Fall Time:

29 ns

Product Type:

MOSFET

Rise Time:

74 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

20 ns

Typical Turn-On Delay Time:

7.1 ns

Part # Aliases:

SP001550522

Unit Weight:

0.139332 oz

Tags

IRLR024NP, IRLR024N, IRLR02, IRLR0, IRLR, IRL