NTD4857NT4G

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

25 V

Id - Continuous Drain Current:

15 A

Rds On - Drain-Source Resistance:

5.7 mOhms

Vgs - Gate-Source Voltage:

20 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

2.1 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

2.38 mm

Length:

6.73 mm

Transistor Type:

1 N-Channel

Width:

6.22 mm

Brand:

ON Semiconductor

Fall Time:

6.8 ns, 3.6 ns

Product Type:

MOSFET

Rise Time:

20.6 ns, 18.7 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

18.6 ns, 26 ns

Typical Turn-On Delay Time:

13.9 ns, 8.7 ns

Unit Weight:

0.139332 oz

Tags

NTD4857, NTD485, NTD48, NTD4, NTD