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IRFB812PBF

IRFB812PBF
Mfr. #:
IRFB812PBF
Manufacturer:
Infineon / IR
Description:
MOSFET Gen 10.7 FredFet 500V 1.5Ohm
Lifecycle:
New from this manufacturer.
Datasheet:
IRFB812PBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFB812PBF DatasheetIRFB812PBF Datasheet (P4-P6)IRFB812PBF Datasheet (P7-P8)
ECAD Model:
More Information:
IRFB812PBF more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
500 V
Id - Continuous Drain Current:
3.6 A
Rds On - Drain-Source Resistance:
1.75 Ohms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
13.3 nC
Pd - Power Dissipation:
78 W
Configuration:
Single
Packaging:
Tube
Height:
15.65 mm
Length:
10 mm
Transistor Type:
1 N-Channel
Width:
4.4 mm
Brand:
Infineon / IR
Product Type:
MOSFET
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Part # Aliases:
SP001563948
Unit Weight:
0.211644 oz
Tags
IRFB8, IRFB, IRF
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 500 V 2.2 Ohm 20 nC HEXFET® Power Mosfet - TO-220-3
***ernational Rectifier
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
***et
Trans MOSFET N-CH 500V 3.6A 3-Pin(3+Tab) TO-220AB Tube
***nell
MOSFET, N CH, 500V, 3.6A,TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:3.6A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.75ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3
MotIRFET™ HEXFET® Power MOSFETs
Infineon MotIRFET™ HEXFET® MOSFETs offer a fast body diode to eliminate the need for external diodes in ZVS applications. They also have a lower gate charge which results in simpler drive requirements and a higher gate voltage threshold that offers improved noise immunity. These devices are rated at 500 V (VDSS) and continuous current (ID) of 3.6A or 6.0A. Typical applications for these MOSFETs include zero voltage switching (ZVS) SMPS, uninterruptible power supplies (UPS), and motor control applications.Learn More
Part # Mfg. Description Stock Price
IRFB812PBF
DISTI # IRFB812PBF-ND		Infineon Technologies AGMOSFET N CH 500V 3.6A TO220AB
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$0.4725
IRFB812PBF
DISTI # IRFB812PBF		Infineon Technologies AGTrans MOSFET N-CH 500V 3.6A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: IRFB812PBF)
RoHS: Compliant
Min Qty: 2000
Container: Tube		Americas - 0
  • 20000:$0.3039
  • 10000:$0.3099
  • 6000:$0.3209
  • 4000:$0.3329
  • 2000:$0.3449
IRFB812PBF
DISTI # IRFB812PBF		Infineon Technologies AGTrans MOSFET N-CH 500V 3.6A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: IRFB812PBF)
RoHS: Compliant
Min Qty: 2000
Container: Tube		Americas - 0
  • 20000:$0.3039
  • 10000:$0.3099
  • 6000:$0.3209
  • 4000:$0.3329
  • 2000:$0.3449
IRFB812PBF
DISTI # IRFB812PBF		Infineon Technologies AGTrans MOSFET N-CH 500V 3.6A 3-Pin(3+Tab) TO-220AB Tube - Bulk (Alt: IRFB812PBF)
Min Qty: 1000
Container: Bulk		Americas - 0
  • 10000:$0.3809
  • 5000:$0.3889
  • 3000:$0.4039
  • 2000:$0.4199
  • 1000:$0.4369
IRFB812PBF
DISTI # SP001563948		Infineon Technologies AGTrans MOSFET N-CH 500V 3.6A 3-Pin(3+Tab) TO-220AB Tube (Alt: SP001563948)
RoHS: Compliant
Min Qty: 50
Container: Tube		Europe - 0
  • 500:€0.3209
  • 300:€0.3459
  • 200:€0.3749
  • 100:€0.4089
  • 50:€0.4999
IRFB812PBF
DISTI # 70411595		Infineon Technologies AGIRFB812PBF N-channel MOSFET Transistor,3.6 A,500 V,3-Pin TO-220AB
RoHS: Compliant		0
  • 5:$0.7400
IRFB812PBF
DISTI # 942-IRFB812PBF		Infineon Technologies AGMOSFET Gen 10.7 FredFet 500V 1.5Ohm
RoHS: Compliant		1110
  • 1:$0.9900
  • 10:$0.8400
  • 100:$0.6460
  • 500:$0.5710
  • 1000:$0.4500
IRFB812PBFInternational RectifierPower Field-Effect Transistor, 3.6A I(D), 500V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		600
  • 1000:$0.4000
  • 500:$0.4200
  • 100:$0.4300
  • 25:$0.4500
  • 1:$0.4900
IRFB812PBF
DISTI # 7481939		Infineon Technologies AGMOSFET N-CH 500V 3.6A HEXFET TO220AB, PK1100
  • 125:£0.2900
  • 5:£0.2980
IRFB812PBFInternational Rectifier 
RoHS: Compliant		1700
    IRFB812PBF
    DISTI # IRFB812PBF    		Infineon Technologies AGN-Ch 500V 3,6A 78W 2,2R TO220AB
    RoHS: Compliant    		270
    • 10:€0.6030
    • 50:€0.3630
    • 200:€0.3030
    • 500:€0.2920
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    Availability
    Stock:
    Available
    On Order:
    1984
    Enter Quantity:
    Current price of IRFB812PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.99
    $0.99
    10
    $0.84
    $8.40
    100
    $0.65
    $64.60
    500
    $0.57
    $285.50
    1000
    $0.45
    $450.00
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