SSM2212CPZ-R7

SSM2212CPZ-R7
Mfr. #:
SSM2212CPZ-R7
メーカー:
Analog Devices Inc.
説明:
Bipolar Transistors - BJT Low Noise,Matched Dual NPN Transistor
ライフサイクル:
メーカー新製品
データシート:
SSM2212CPZ-R7 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SSM2212CPZ-R7 DatasheetSSM2212CPZ-R7 Datasheet (P4-P6)SSM2212CPZ-R7 Datasheet (P7-P9)SSM2212CPZ-R7 Datasheet (P10-P12)SSM2212CPZ-R7 Datasheet (P13)
ECAD Model:
詳しくは:
SSM2212CPZ-R7 詳しくは SSM2212CPZ-R7 Product Details
製品属性
属性値
メーカー:
アナログ・デバイセズ
製品カテゴリ:
バイポーラトランジスタ-BJT
JBoss:
Y
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
LFCSP-16
トランジスタの極性:
NPN
構成:
デュアル
コレクター-エミッター電圧VCEOMax:
40 V
コレクター-ベース電圧VCBO:
40 V
コレクター-エミッター飽和電圧:
50 mV
最大DCコレクタ電流:
20 mA
ゲイン帯域幅積fT:
200 MHz
最低動作温度:
- 40 C
最高作動温度:
+ 85 C
シリーズ:
SSM2212
DC電流ゲインhFEMax:
2400 at 1 mA, 15 V, 2400 at 1 mA, 15 V
包装:
リール
ブランド:
アナログ・デバイセズ
DCコレクター/ベースゲインhfe最小:
300 at 1 mA, 15 V, 300 at 1 mA, 15 V
感湿性:
はい
製品タイプ:
BJT-バイポーラトランジスタ
ファクトリーパックの数量:
1500
サブカテゴリ:
トランジスタ
Tags
SSM2212C, SSM2212, SSM221, SSM22, SSM2, SSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans GP BJT NPN 40V 0.02A 16-Pin LFCSP EP T/R
***ark
Low Noise Matched Dual NPN Transistor, REEL7
***et Europe
Trans GP BJT NPN 40V 0.02A 16-Pin LFCSP T/R
***ponent Sense
IC SMD LOW-NOISE FOR AUDIO DUAL MATCHED
***i-Key
TRANS 2NPN 40V 0.02A 16WLCSP
***hardson RFPD
RF POWER TRANSISTOR
***log Devices
The SSM2212 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralow noise audio systems. With its extremely low input base spreading resistance (rbb' is typically 28 Ω) and high current gain (hFE typically exceeds 600 at IC = 1 mA), the SSM2212 can achieve outstanding signal-to-noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers. Excellent matching of the current gain (ΔhFE) to approximately 0.5% and low VOS of less than 10 μV typical make the SSM2212 ideal for symmetrically balanced designs, which reduce high- order amplifier harmonic distortion. Stability of the matching parameters is guaranteed by protection diodes across the base-emitter junction. These diodes prevent degradation of beta and matching characteristics due to reverse biasing of the base-emitter junction. The SSM2212 is also an ideal choice for accurate and reliable current biasing and mirroring circuits. Furthermore, because the accuracy of a current mirror degrades exponentially with mismatches of VBE between transistor pairs, the low VOS of the SSM2212 does not need offset trimming in most circuit applications. The SSM2212 SOIC performance and characteristics are guaranteed over the extended temperature range of −40°C to +85°C. The SSM2212 is available in 8-lead SOIC and 16-lead LFCSP packages.
SSM2212 Dual-Matched NPN Transistor
Analog Devices SSM2212 features a dual, NPN-matched transistor pair specifically designed to meet the requirements of ultralow noise audio systems. With its extremely low input base spreading resistance (rbb' is typically 28Ω) and high current gain (hFE typically exceeds 600 at IC = 1mA), the SSM2212 can achieve outstanding signal-to-noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers. Excellent matching of the current gain (ΔhFE) to approximately 0.5% and low VOS of less than 10μV typical make the SSM2212 ideal for symmetrically balanced designs, which reduce high order amplifier harmonic distortion. Stability of the matching parameters is guaranteed by protection diodes across the base-emitter junction. These diodes prevent degradation of beta and matching characteristics due to reverse biasing of the base-emitter junction. The SSM2212 is also an ideal choice for accurate and reliable current biasing and mirroring circuits. Furthermore, because the accuracy of a current mirror degrades exponentially with mismatches of VBE between transistor pairs, the low VOS of the SSM2212 does not need offset trimming in most circuit applications.Learn More
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可用性
ストック:
Available
注文中:
1987
数量を入力してください:
SSM2212CPZ-R7の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$6.73
$6.73
10
$6.06
$60.60
25
$5.70
$142.50
50
$5.36
$268.00
100
$5.09
$509.00
250
$4.78
$1 195.00
500
$4.34
$2 170.00
1000
$3.72
$3 720.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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