STD10NM65N

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

650 V

Id - Continuous Drain Current:

9 A

Rds On - Drain-Source Resistance:

480 mOhms

Vgs - Gate-Source Voltage:

25 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

90 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

2.4 mm

Length:

6.6 mm

Series:

STP10NM65N

Transistor Type:

1 N-Channel

Width:

6.2 mm

Brand:

STMicroelectronics

Fall Time:

20 ns

Product Type:

MOSFET

Rise Time:

8 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

50 ns

Typical Turn-On Delay Time:

12 ns

Unit Weight:

0.139332 oz

Tags

STD10NM65, STD10NM6, STD10NM, STD10N, STD10, STD1, STD