SIA519EDJ-T1-GE3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PowerPAK-SC70-6

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel, P-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

4.5 A

Rds On - Drain-Source Resistance:

40 mOhms, 90 mOhms

Vgs th - Gate-Source Threshold Voltage:

600 mV, 500 mV

Vgs - Gate-Source Voltage:

4.5 V

Qg - Gate Charge:

3.7 nC, 5.3 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

7.8 W

Configuration:

Dual

Channel Mode:

Enhancement

Tradename:

TrenchFET, PowerPAK

Packaging:

Reel

Height:

0.75 mm

Length:

2.05 mm

Series:

SIA

Transistor Type:

1 N-Channel, 1 P-Channel

Width:

2.05 mm

Brand:

Vishay / Siliconix

Forward Transconductance - Min:

12 S, 7 S

Fall Time:

16 ns, 10 ns

Product Type:

MOSFET

Rise Time:

21 ns, 25 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

12 ns, 20 ns

Typical Turn-On Delay Time:

10 ns, 20 ns

Part # Aliases:

SIA519EDJ-GE3

Unit Weight:

0.000988 oz

Tags

SIA519E, SIA519, SIA51, SIA5, SIA