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MRFE6S9160HSR3

MRFE6S9160HSR3
Mfr. #:
MRFE6S9160HSR3
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors HV6E 900MHZ 160W NI780HS
Lifecycle:
New from this manufacturer.
Datasheet:
MRFE6S9160HSR3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
NXP
Product Category:
RF MOSFET Transistors
RoHS:
Y
Transistor Polarity:
N-Channel
Technology:
Si
Vds - Drain-Source Breakdown Voltage:
66 V
Minimum Operating Temperature:
- 65 C
Maximum Operating Temperature:
+ 150 C
Mounting Style:
SMD/SMT
Package / Case:
NI-780S
Packaging:
Reel
Configuration:
Single
Height:
4.32 mm
Length:
20.7 mm
Series:
MRFE6S9160H
Width:
9.91 mm
Brand:
NXP / Freescale
Channel Mode:
Enhancement
Product Type:
RF MOSFET Transistors
Factory Pack Quantity:
250
Subcategory:
MOSFETs
Vgs - Gate-Source Voltage:
- 0.5 V, 12 V
Part # Aliases:
935319257128
Unit Weight:
0.113960 oz
Tags
MRFE6S9160HSR, MRFE6S9160HS, MRFE6S916, MRFE6S91, MRFE6S9, MRFE6S, MRFE6, MRFE, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor,865 to 960 MHz, 160 W, Typ Gain in dB is 21 @ 880 MHz, 28 V, LDMOS, SOT1793
*** Semiconductors SCT
Single N-CDMA Lateral N-Channel RF Power MOSFET, 880 MHz, 35 W Avg., 28 V, CFM2F, RoHS
***et
Power LDMOS Transistor N-Channel 66V 3-Pin NI-780S T/R
***ponent Stockers
UHF BAND Si N-CHANNEL RF POWER MOSFET
***S
French Electronic Distributor since 1988
***or
RF ULTRA HIGH FREQUENCY BAND, N-
Part # Mfg. Description Stock Price
MRFE6S9160HSR3
DISTI # MRFE6S9160HSR3-ND		NXP SemiconductorsFET RF 66V 880MHZ NI-780S
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)		Limited Supply - Call
    MRFE6S9160HSR3
    DISTI # MRFE6S9160HSR3    		Avnet, Inc.Trans MOSFET N-CH 66V 3-Pin NI-780S T/R - Bulk (Alt: MRFE6S9160HSR3)
    RoHS: Compliant
    Min Qty: 3
    Container: Bulk    		Americas - 0
    • 30:$120.4900
    • 15:$122.7900
    • 9:$127.3900
    • 6:$132.5900
    • 3:$137.9900
    MRFE6S9160HSR3
    DISTI # 841-MRFE6S9160HSR3    		NXP SemiconductorsRF MOSFET Transistors HV6E 900MHZ 160W NI780HS
    RoHS: Compliant    		0
      MRFE6S9160HSR3Freescale SemiconductorRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
      RoHS: Compliant      		1242
      • 1000:$124.6500
      • 500:$131.2100
      • 100:$136.6000
      • 25:$142.4500
      • 1:$153.4100
      MRFE6S9160HSR3Freescale Semiconductor 247
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        Availability
        Stock:
        Available
        On Order:
        3500
        Enter Quantity:
        Current price of MRFE6S9160HSR3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
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