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MRFE6VP61K25HR5

MRFE6VP61K25HR5
Mfr. #:
MRFE6VP61K25HR5
メーカー:
NXP / Freescale
説明:
RF MOSFET Transistors VHV6 1.25KW ISM NI1230H
ライフサイクル:
メーカー新製品
データシート:
MRFE6VP61K25HR5 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
MRFE6VP61K25HR5 詳しくは
製品属性
属性値
メーカー：
NXP
製品カテゴリ：
RFMOSFETトランジスタ
JBoss：
Y
トランジスタの極性：
Nチャネル
テクノロジー：
Si
Id-連続ドレイン電流：
10 uA
Vds-ドレイン-ソース間降伏電圧：
133 V
利得：
24 dB
出力電力：
1.25 kW
最高作動温度：
+ 150 C
取り付けスタイル：
SMD / SMT
パッケージ/ケース：
NI-1230
包装：
リール
構成：
独身
動作周波数：
1.8 MHz, 600 MHz
シリーズ：
MRFE6VP61K25H
タイプ：
RFパワーMOSFET
ブランド：
NXP /フリースケール
Pd-消費電力：
1.333 kW
製品タイプ：
RFMOSFETトランジスタ
ファクトリーパックの数量：
50
サブカテゴリ：
MOSFET
Vgs-ゲート-ソース間電圧：
10 V
Vgs th-ゲート-ソースしきい値電圧：
2.2 V
パーツ番号エイリアス：
935314411178
単位重量：
0.464036 oz
Tags
MRFE6VP61K25H, MRFE6VP61, MRFE6VP6, MRFE6VP, MRFE6V, MRFE6, MRFE, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
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***W
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***nell
TRANSISTOR, RF, 133V, NI-1230H-4S; Drain Source Voltage Vds: 133VDC; Continuous Drain Current Id: -; Power Dissipation Pd: 1.333kW; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 600MHz; RF Transistor Case: NI-1230;
***W
RF Power Transistor,1.8 to 2000 MHz, 25 W, Typ Gain in dB is 25.5 @ 512 MHz, 50 V, LDMOS, SOT1732
***ure Electronics
MRFE6VS Series 133 V 512 MHz RF Power LDMOS Transistor - TO-270-2
***nell
TRANSISTOR, RF, 133V, TO-270-2; Drain Source Voltage Vds: 133VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 2000MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***(Formerly Allied Electronics)
IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223
***eco
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***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3
*** Source Electronics
Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223
***nsix Microsemi
Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***W
RF Power Transistor,1.8 to 2000 MHz, 100 W, Typ Gain in dB is 27.2 @ 512 MHz, 50 V, LDMOS, SOT1827
***roFlash
RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
***nell
TRANSISTOR, RF, 133V, NI-780H-4L; Drain Source Voltage Vds: 133VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 2000MHz; RF Transistor Case: NI-780; No. of Pins: 4Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: -; SVHC: No SVHC (15-Jan-2019)
***ark
LDMOS, RF, 100W, NI-780; Transistor Type:RF MOSFET; Drain Source Voltage Vds:133V DC; Power Dissipation Pd:100W; Operating Frequency Range:1.8MHz to 2GHz; Operating Temperature Min:-40°C; Operating Temperature Max:150°C
***hard Electronics
Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No
***ment14 APAC
MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V
***W
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Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V, CFM4F, RoHS
***ark
RF POWER FET, N CH, 125V, NI-780-4; Transistor Type:RF MOSFET; Drain Source Voltage Vds:125V; Continuous Drain Current Id:100mA; Power Dissipation Pd:300W; Operating Frequency Min:1.8MHz; Operating Frequency Max:600MHz; No. of Pins:4;RoHS Compliant: Yes
***ure Electronics
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***ical
Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R
***ment14 APAC
MOSFET, N-CH, 100V, 4.3A, TO-252AA
*** Services
CoC and 2-years warranty / RFQ for pricing
***S
French Electronic Distributor since 1988
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: No
MRFE6VP61K25H Wideband RF Power LDMOS MOSFETs
NXP's MRFE6VP61K25H Wideband RF Power LDMOS MOSFETs are high ruggedness devices that are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. Features include devices can be used in either a single-ended or in a push-pull configuration, are suitable for linear application with appropriate biasing, and these devices have an integrated ESD protection with greater negative gate-source voltage range for improved Class C operation.Learn More
モデル メーカー 説明 ストック 価格
MRFE6VP61K25HR5
DISTI # V72:2272_07190034		NXP SemiconductorsTrans RF MOSFET N-CH 133V 5-Pin Case 375D-05 T/R
RoHS: Compliant		44
  • 25:$161.2400
  • 10:$162.8400
  • 1:$171.3300
MRFE6VP61K25HR5
DISTI # MRFE6VP61K25HR5CT-ND		NXP SemiconductorsFET RF 2CH 133V 230MHZ NI-1230
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		59In Stock
  • 10:$167.3400
  • 1:$174.7200
MRFE6VP61K25HR5
DISTI # MRFE6VP61K25HR5DKR-ND		NXP SemiconductorsFET RF 2CH 133V 230MHZ NI-1230
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		59In Stock
  • 10:$167.3400
  • 1:$174.7200
MRFE6VP61K25HR5
DISTI # MRFE6VP61K25HR5TR-ND		NXP SemiconductorsFET RF 2CH 133V 230MHZ NI-1230
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)		50In Stock
  • 50:$158.8818
MRFE6VP61K25HR5
DISTI # 25766998		NXP SemiconductorsTrans RF MOSFET N-CH 133V 5-Pin Case 375D-05 T/R
RoHS: Compliant		44
  • 25:$161.1800
  • 10:$162.7200
  • 1:$171.2600
MRFE6VP61K25HR5
DISTI # MRFE6VP61K25HR5		NXP SemiconductorsTrans MOSFET N-CH 133V 4-Pin NI-1230H T/R (Alt: MRFE6VP61K25HR5)
RoHS: Compliant
Min Qty: 50
Container: Tape and Reel		Europe - 40
  • 50:€141.3900
  • 100:€140.8900
  • 200:€140.3900
  • 300:€139.8900
  • 500:€139.4900
MRFE6VP61K25HR5
DISTI # MRFE6VP61K25HR5		NXP SemiconductorsTrans MOSFET N-CH 133V 4-Pin NI-1230H T/R - Tape and Reel (Alt: MRFE6VP61K25HR5)
RoHS: Compliant
Min Qty: 50
Container: Reel		Americas - 0
  • 50:$155.5900
  • 100:$155.1900
  • 200:$154.7900
  • 300:$154.4900
  • 500:$154.0900
MRFE6VP61K25HR5
DISTI # MRFE6VP61K25HR5		NXP SemiconductorsTrans MOSFET N-CH 133V 4-Pin NI-1230H T/R (Alt: MRFE6VP61K25HR5)
RoHS: Compliant
Min Qty: 50
Container: Tape and Reel		Asia - 0
  • 50:$170.6571
  • 100:$165.9167
  • 150:$161.4324
  • 250:$157.1842
  • 500:$155.1429
  • 1250:$153.1539
  • 2500:$149.3250
MRFE6VP61K25HR5
DISTI # 19T6330		NXP SemiconductorsTrans MOSFET N-CH 133V 4-Pin NI-1230H T/R - Product that comes on tape, but is not reeled (Alt: 19T6330)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$256.4100
  • 10:$245.5700
  • 25:$241.9400
MRFE6VP61K25HR5
DISTI # 19T6330		NXP SemiconductorsRF POWER FET, N CHANNEL, 125V 1250W, NI-1230,Drain Source Voltage Vds:125V,Continuous Drain Current Id:100mA,Power Dissipation Pd:1.333kW,Operating Frequency Min:1.8MHz,Operating Frequency Max:600MHz,RF Transistor Case:NI-1230 RoHS Compliant: Yes8
  • 1:$173.2100
  • 10:$164.8500
  • 25:$162.5400
MRFE6VP61K25HR5
DISTI # 29X4272		NXP SemiconductorsRF POWER FET, N CHANNEL, 125V 1250W, NI-1230, FULL REEL,Drain Source Voltage Vds:125V,Continuous Drain Current Id:100mA,Power Dissipation Pd:1.333kW,Operating Frequency Min:1.8MHz,Operating Frequency Max:600MHz,Product Range:- RoHS Compliant: Yes0
  • 1:$273.8300
  • 10:$268.0500
  • 25:$250.6900
  • 50:$221.7700
MRFE6VP61K25HR5.
DISTI # 81AC9282		NXP SemiconductorsWIDEBAND RF POWER LDMOS TRANSISTOR, 1.8-600 MHZ, 1250 W CW, 50 V0
  • 1:$155.5900
  • 100:$155.1900
  • 200:$154.7900
  • 300:$154.4900
  • 500:$154.0900
MRFE6VP61K25HR5Freescale SemiconductorRF Power Field-Effect Transistor
RoHS: Compliant		170
  • 1000:$157.1800
  • 500:$165.4600
  • 100:$172.2600
  • 25:$179.6400
  • 1:$193.4600
MRFE6VP61K25HR6
DISTI # 841-MRFE6VP61K25HR6		NXP SemiconductorsRF MOSFET Transistors VHV6 1.25KW ISM NI1230H
RoHS: Compliant		384
  • 1:$174.7200
  • 5:$170.8300
  • 10:$167.3400
  • 25:$164.8700
  • 50:$161.8800
  • 100:$160.3900
  • 150:$158.8900
MRFE6VP61K25HR5
DISTI # 841-MRFE6VP61K25HR5		NXP SemiconductorsRF MOSFET Transistors VHV6 1.25KW ISM NI1230H
RoHS: Compliant		83
  • 1:$173.2100
  • 5:$169.0400
  • 10:$164.8500
  • 25:$162.5400
  • 50:$162.5400
MRFE6VP61K25HR5
DISTI # MRFE6VP61K25HR5		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		0
  • 50:$158.2400
MRFE6VP61K25HR5
DISTI # 2776254		NXP SemiconductorsTRANSISTOR, RF, 133V, NI-1230H-4S
RoHS: Compliant		25
  • 1:£134.0000
  • 5:£131.0000
  • 10:£123.0000
MRFE6VP61K25HR5
DISTI # C1S233100200551		NXP SemiconductorsTrans RF MOSFET N-CH 133V 5-Pin Case 375D-05 T/R
RoHS: Compliant		44
  • 25:$161.1800
  • 10:$162.7200
  • 1:$171.2600
MRFE6VP61K25HR5
DISTI # 2776254		NXP SemiconductorsTRANSISTOR, RF, 133V, NI-1230H-4S
RoHS: Compliant		27
  • 1:$285.4400
  • 5:$275.9200
画像 モデル 説明
SKY13526-485LF

Mfr.#: SKY13526-485LF

OMO.#: OMO-SKY13526-485LF

 RF Switch ICs .4-2.7GHz SP6T IL .85dB @2.68GHz
MRF151G

Mfr.#: MRF151G

OMO.#: OMO-MRF151G

 RF MOSFET Transistors 5-175MHz 300Watts 50Volt Gain 14dB
PIC32MX340F512H-80I/PT

Mfr.#: PIC32MX340F512H-80I/PT

OMO.#: OMO-PIC32MX340F512H-80I-PT

 32-bit Microcontrollers - MCU 512KB Flash 32KBRAM 80MHz 10B ADC DMA
STM32F446RET6

Mfr.#: STM32F446RET6

OMO.#: OMO-STM32F446RET6

 ARM Microcontrollers - MCU 16/32-BITS MICROS
STM32F469I-DISCO

Mfr.#: STM32F469I-DISCO

OMO.#: OMO-STM32F469I-DISCO

 Development Boards & Kits - ARM Discovery kit with STM32F469NI MCU
M50-3530442

Mfr.#: M50-3530442

OMO.#: OMO-M50-3530442

 Headers & Wire Housings 4 WAY SIL VERT PC TAIL P/HDR
ST-LINK/V2

Mfr.#: ST-LINK/V2

OMO.#: OMO-ST-LINK-V2

 Programmers - Processor Based STM8S STM32 Programr 5V USB 2.0 JTAG DFU
ST-LINK/V2

Mfr.#: ST-LINK/V2

OMO.#: OMO-ST-LINK-V2-STMICROELECTRONICS

 ブランドニューオリジナル
M50-3530442

Mfr.#: M50-3530442

OMO.#: OMO-M50-3530442-HARWIN

 Headers & Wire Housings 4 WAY SIL VERT PC TAIL P/HDR
STM32F469I-DISCO

Mfr.#: STM32F469I-DISCO

OMO.#: OMO-STM32F469I-DISCO-STMICROELECTRONICS

 STM32F469I Microcontroller Development Kit 16.332MB RAM 18MB Flash/NOR Flash Win 7/Win 8/Win XP OS
可用性
ストック:
103
注文中:
2086
数量を入力してください:
MRFE6VP61K25HR5の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格（USD）
量
単価
小計金額
1
$173.21
$173.21
5
$169.04
$845.20
10
$164.85
$1 648.50
25
$162.54
$4 063.50
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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