CSD86311W1723

CSD86311W1723
Mfr. #:
CSD86311W1723
説明:
Trans MOSFET N-CH 25V 4.5A 12-Pin Wafer T/R
ライフサイクル:
メーカー新製品
データシート:
CSD86311W1723 データシート
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詳しくは:
CSD86311W1723 詳しくは CSD86311W1723 Product Details
製品属性
属性値
メーカー
テキサスインスツルメンツ
製品カテゴリ
FET-アレイ
シリーズ
NexFET
包装
Digi-ReelR代替パッケージ
取り付けスタイル
SMD / SMT
商標名
NexFET
パッケージ-ケース
12-UFBGA, DSBGA
テクノロジー
Si
作動温度
-55°C ~ 150°C (TJ)
取付タイプ
表面実装
チャネル数
2 Channel
サプライヤー-デバイス-パッケージ
12-DSBGA (1.53x1.98)
構成
デュアルコモンソース
FETタイプ
2 N-Channel (Dual)
パワーマックス
1.5W
トランジスタタイプ
2 N-Channel
Drain-to-Source-Voltage-Vdss
25V
入力-静電容量-Ciss-Vds
585pF @ 12.5V
FET機能
ロジックレベルゲート
Current-Continuous-Drain-Id-25°C
4.5A
Rds-On-Max-Id-Vgs
39 mOhm @ 2A, 8V
Vgs-th-Max-Id
1.4V @ 250μA
ゲートチャージ-Qg-Vgs
4nC @ 4.5V
Pd-電力損失
1.5 W
最高作動温度
+ 150 C
最低作動温度
- 55 C
立ち下がり時間
2.9 ns
立ち上がり時間
4.3 ns
Vgs-Gate-Source-Voltage
10 V
Id-連続-ドレイン-電流
4.5 A
Vds-ドレイン-ソース-ブレークダウン-電圧
25 V
Vgs-th-Gate-Source-Threshold-Voltage
1 V
Rds-On-Drain-Source-Resistance
42 mOhms
トランジスタ-極性
Nチャネル
典型的なターンオフ遅延時間
13.2 ns
典型的なターンオン遅延時間
5.4 ns
Qg-Gate-Charge
3.1 nC
フォワード-相互コンダクタンス-最小
6.4 S
Tags
CSD86, CSD8, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
25V, N ch NexFET MOSFET™, dual common source WLP1.7x2.3, 42mOhm 12-DSBGA -55 to 150
***ark
DUAL N CH POWER MOSFET, 25V, 4.5A, DSBGA-12, FULL REEL
***th Star Micro
the device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with thermal characteristics in an ultra low profile. low on resistance and gate charge coupled with the small footprint and low profile make the device ideal for battery operated space constrained application in load management as well as dc-dc converter applications
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
モデル 説明 ストック 価格
CSD86311W1723
DISTI # V98:2334_07248904
Trans MOSFET N-CH 25V 4.5A 12-Pin Wafer T/R
RoHS: Compliant
8701
  • 6000:$0.4334
  • 3000:$0.4335
  • 1000:$0.4831
  • 500:$0.6045
  • 250:$0.6786
  • 100:$0.6793
  • 25:$0.7761
  • 10:$0.8624
  • 1:$1.0051
CSD86311W1723
DISTI # 296-27599-1-ND
MOSFET 2N-CH 25V 4.5A 12DSBGA
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1221In Stock
  • 1000:$0.5574
  • 500:$0.7061
  • 100:$0.9105
  • 10:$1.1520
  • 1:$1.3000
CSD86311W1723
DISTI # 296-27599-6-ND
MOSFET 2N-CH 25V 4.5A 12DSBGA
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1221In Stock
  • 1000:$0.5574
  • 500:$0.7061
  • 100:$0.9105
  • 10:$1.1520
  • 1:$1.3000
CSD86311W1723
DISTI # 296-27599-2-ND
MOSFET 2N-CH 25V 4.5A 12DSBGA
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 6000:$0.4799
  • 3000:$0.5051
CSD86311W1723
DISTI # 25824809
Trans MOSFET N-CH 25V 4.5A 12-Pin Wafer T/R
RoHS: Compliant
8701
  • 6000:$0.4334
  • 3000:$0.4335
  • 1000:$0.4831
  • 500:$0.6045
  • 250:$0.6786
  • 100:$0.6793
  • 25:$0.7761
  • 16:$0.8624
CSD86311W1723
DISTI # CSD86311W1723
Trans MOSFET N-CH 25V 4.5A 12-Pin Wafer T/R - Tape and Reel (Alt: CSD86311W1723)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.4759
  • 6000:$0.4529
  • 12000:$0.4369
  • 18000:$0.4229
  • 30000:$0.4109
CSD86311W1723
DISTI # CSD86311W1723
Trans MOSFET N-CH 25V 4.5A 12-Pin Wafer T/R (Alt: CSD86311W1723)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 3000:€0.6619
  • 6000:€0.5409
  • 12000:€0.4959
  • 18000:€0.4249
  • 30000:€0.3969
CSD86311W1723Dual N-Channel NexFET&#153,Power MOSFET5325
  • 1000:$0.3700
  • 750:$0.4200
  • 500:$0.5200
  • 250:$0.6400
  • 100:$0.6900
  • 25:$0.8100
  • 10:$0.8800
  • 1:$0.9800
CSD86311W1723
DISTI # 595-CSD86311W1723
MOSFET Dual N-Channel Nex FET Pwr MOSFET
RoHS: Compliant
1764
  • 1:$1.0800
  • 10:$0.9200
  • 100:$0.7060
  • 500:$0.6240
  • 1000:$0.4920
  • 3000:$0.4370
CSD86311W1723Power Field-Effect Transistor, 4.5A I(D), 25V, 0.051ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
5076
  • 1000:$0.4900
  • 500:$0.5100
  • 100:$0.5300
  • 25:$0.5600
  • 1:$0.6000
CSD86311W1723
DISTI # C1S746202119727
Trans MOSFET N-CH 25V 4.5A 12-Pin Wafer T/R
RoHS: Compliant
8701
  • 250:$0.6786
  • 100:$0.6793
  • 25:$0.7761
  • 10:$0.8624
CSD86311W1723
DISTI # 1892456
MOSFET, NN CH, 25V, 4.5A, 12DSBGA
RoHS: Compliant
15
  • 5:£0.8190
  • 25:£0.7340
  • 100:£0.5630
  • 250:£0.5310
  • 500:£0.4980
CSD86311W1723
DISTI # 1892456RL
MOSFET, NN CH, 25V, 4.5A, 12DSBGA
RoHS: Compliant
0
  • 1:$1.7200
  • 10:$1.4600
  • 100:$1.1200
  • 500:$0.9870
  • 1000:$0.7790
  • 3000:$0.6920
CSD86311W1723
DISTI # 1892456
MOSFET, NN CH, 25V, 4.5A, 12DSBGA
RoHS: Compliant
0
  • 1:$1.7200
  • 10:$1.4600
  • 100:$1.1200
  • 500:$0.9870
  • 1000:$0.7790
  • 3000:$0.6920
画像 モデル 説明
CSD86336Q3DT

Mfr.#: CSD86336Q3DT

OMO.#: OMO-CSD86336Q3DT

MOSFET 25V, Nch synchronous buck NexFET MOSFETG , SON3x3 PowerBlock, 20A 8-VSON-CLIP -55 to 150
CSD86350Q5D

Mfr.#: CSD86350Q5D

OMO.#: OMO-CSD86350Q5D

MOSFET Synch Buck NexFET Pwr Block MOSFET
CSD86330EVM-717

Mfr.#: CSD86330EVM-717

OMO.#: OMO-CSD86330EVM-717

Power Management IC Development Tools CSD86330EVM-717
CSD86330

Mfr.#: CSD86330

OMO.#: OMO-CSD86330-TEXAS-INSTRUMENTS

ブランドニューオリジナル
CSD86330Q3DTI

Mfr.#: CSD86330Q3DTI

OMO.#: OMO-CSD86330Q3DTI-TEXAS-INSTRUMENTS

ブランドニューオリジナル
CSD8635005D

Mfr.#: CSD8635005D

OMO.#: OMO-CSD8635005D-TEXAS-INSTRUMENTS

ブランドニューオリジナル
CSD86336Q3DT

Mfr.#: CSD86336Q3DT

OMO.#: OMO-CSD86336Q3DT-TEXAS-INSTRUMENTS

SYNCHRONOUS BUCK NEXFET POWER BL
CSD86350Q5D

Mfr.#: CSD86350Q5D

OMO.#: OMO-CSD86350Q5D-TEXAS-INSTRUMENTS

MOSFET 2N-CH 25V 40A 8SON
CSD86330EVM-717

Mfr.#: CSD86330EVM-717

OMO.#: OMO-CSD86330EVM-717-TEXAS-INSTRUMENTS

EVAL MODULE FOR CSD86330Q3D
CSD86330Q3D

Mfr.#: CSD86330Q3D

OMO.#: OMO-CSD86330Q3D-TEXAS-INSTRUMENTS

Synchronous Buck Power Block 8-Pin SON EP T/R
可用性
ストック:
Available
注文中:
5500
数量を入力してください:
CSD86311W1723の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$0.56
$0.56
10
$0.53
$5.27
100
$0.50
$49.95
500
$0.47
$235.90
1000
$0.44
$444.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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