IPW65R080CFDAFKSA1

IPW65R080CFDAFKSA1
Mfr. #:
IPW65R080CFDAFKSA1
メーカー:
Infineon Technologies
説明:
MOSFET N-Ch 650V 43.3A TO247-3
ライフサイクル:
メーカー新製品
データシート:
IPW65R080CFDAFKSA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
IPW65R080CFDAFKSA1 詳しくは
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
スルーホール
パッケージ/ケース:
TO-247-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
650 V
Id-連続ドレイン電流:
43.3 A
Rds On-ドレイン-ソース抵抗:
72 mOhms
Vgs th-ゲート-ソースしきい値電圧:
3.5 V
Vgs-ゲート-ソース間電圧:
20 V
Qg-ゲートチャージ:
161 nC
最低動作温度:
- 40 C
最高作動温度:
+ 150 C
Pd-消費電力:
391 W
構成:
独身
チャネルモード:
強化
商標名:
CoolMOS
包装:
チューブ
高さ:
21.1 mm
長さ:
16.13 mm
シリーズ:
CoolMOS CFDA
トランジスタタイプ:
1 N-Channel
幅:
5.21 mm
ブランド:
インフィニオンテクノロジーズ
立ち下がり時間:
6 ns
製品タイプ:
MOSFET
立ち上がり時間:
18 ns
ファクトリーパックの数量:
240
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
85 ns
典型的なターンオン遅延時間:
20 ns
パーツ番号エイリアス:
IPW65R080CFDA IPW65R8CFDAXK SP000875806
単位重量:
1.340411 oz
Tags
IPW65R080CFDA, IPW65R08, IPW65R0, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650 V 80 mOhm 161 nC CoolMOS™ Power Mosfet - TO-247-3
***p One Stop Japan
Trans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247 Tube
***ineon SCT
650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs, PG-TO247-3, RoHS
***ark
Mosfet, N-Ch, Aec-Q101, 650V, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:43.3A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.072Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ineon
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
モデル メーカー 説明 ストック 価格
IPW65R080CFDAFKSA1
DISTI # V99:2348_06378457
Infineon Technologies AGTrans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
280
  • 240:$7.5580
  • 10:$8.8290
  • 1:$9.5990
IPW65R080CFDAFKSA1
DISTI # IPW65R080CFDAFKSA1-ND
Infineon Technologies AGMOSFET N-CH 700V 43.3A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
1563In Stock
  • 240:$9.2271
  • 10:$11.2220
  • 1:$12.4700
IPW65R080CFDAFKSA1
DISTI # 31240601
Infineon Technologies AGTrans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
280
  • 10:$8.8290
  • 1:$9.5990
IPW65R080CFDAXK
DISTI # IPW65R080CFDAFKSA1
Infineon Technologies AGTrans MOSFET N-CH 650V 43.3A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: IPW65R080CFDAFKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 240:$6.4900
  • 480:$6.1900
  • 960:$5.9900
  • 1440:$5.7900
  • 2400:$5.6900
IPW65R080CFDAFKSA1
DISTI # 13AC9099
Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:43.3A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.072ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes0
  • 1:$12.6400
  • 10:$11.5200
  • 25:$11.0400
  • 50:$10.3800
  • 100:$9.7300
IPW65R080CFDAFKSA1
DISTI # 726-IPW65R080CFDAFKS
Infineon Technologies AGMOSFET N-Ch 650V 43.3A TO247-3
RoHS: Compliant
1401
  • 1:$10.7900
  • 10:$9.7500
  • 25:$9.3000
  • 100:$8.0800
  • 250:$7.7100
  • 500:$7.0300
IPW65R080CFDA
DISTI # 726-IPW65R080CFDA
Infineon Technologies AGMOSFET N-Ch 650V 43.3A TO247-3
RoHS: Compliant
158
  • 1:$10.7900
  • 10:$9.7500
  • 25:$9.3000
  • 100:$8.0800
  • 250:$7.7100
  • 500:$7.0300
IPW65R080CFDAFKSA1
DISTI # 2726080
Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-247-3
RoHS: Compliant
140
  • 1:$19.8800
  • 10:$17.8900
  • 240:$14.7100
IPW65R080CFDAFKSA1
DISTI # 2726080
Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-247-3
RoHS: Compliant
161
  • 1:£6.2100
  • 5:£5.5200
  • 10:£5.2400
  • 50:£5.2200
  • 100:£5.1900
IPW65R080CFDAFKSA1
DISTI # C1S322000254716
Infineon Technologies AGTrans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
280
  • 240:$7.5580
  • 10:$8.8290
  • 1:$9.5990
画像 モデル 説明
AMC1311BDWV

Mfr.#: AMC1311BDWV

OMO.#: OMO-AMC1311BDWV

Isolation Amplifiers 200 KHZ REINFORCED ISOLATED AMPLIFIER
IAUT260N10S5N019ATMA1

Mfr.#: IAUT260N10S5N019ATMA1

OMO.#: OMO-IAUT260N10S5N019ATMA1

MOSFET MOSFET_(75V,120V(
CR101-50AE

Mfr.#: CR101-50AE

OMO.#: OMO-CR101-50AE

Heat Sinks Aluminum heatsink 50mmBlkAnodized
IAUT260N10S5N019ATMA1

Mfr.#: IAUT260N10S5N019ATMA1

OMO.#: OMO-IAUT260N10S5N019ATMA1-INFINEON-TECHNOLOGIES

MOSFET_(75V,120V(
0697H9150-02

Mfr.#: 0697H9150-02

OMO.#: OMO-0697H9150-02-BEL

0697H9150-02
AMC1311BDWV

Mfr.#: AMC1311BDWV

OMO.#: OMO-AMC1311BDWV-TEXAS-INSTRUMENTS

PRECISION REINFORCED ISOLATED AM
可用性
ストック:
825
注文中:
2808
数量を入力してください:
IPW65R080CFDAFKSA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$10.78
$10.78
10
$9.74
$97.40
25
$9.29
$232.25
100
$8.07
$807.00
250
$7.70
$1 925.00
500
$7.02
$3 510.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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