BSD223P H6327

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-363-6

Number of Channels:

2 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

390 mA

Rds On - Drain-Source Resistance:

700 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.2 V

Vgs - Gate-Source Voltage:

12 V

Qg - Gate Charge:

- 620 pC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

250 mW

Configuration:

Dual

Channel Mode:

Enhancement

Packaging:

Reel

Height:

0.9 mm

Length:

2 mm

Series:

BSD223

Transistor Type:

2 P-Channel

Width:

1.25 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

350 mS

Development Kit:

-

Fall Time:

3.2 ns

Product Type:

MOSFET

Rise Time:

5 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

5.1 ns

Typical Turn-On Delay Time:

3.8 ns

Part # Aliases:

BSD223PH6327XT BSD223PH6327XTSA1 SP000924074

Unit Weight:

0.000265 oz

Tags

BSD223PH, BSD223, BSD22, BSD2, BSD