STGP6M65DF2

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

IGBT Transistors

RoHS:

Y

Technology:

Si

Package / Case:

TO-220-3

Mounting Style:

Through Hole

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

650 V

Collector-Emitter Saturation Voltage:

1.55 V

Maximum Gate Emitter Voltage:

20 V

Continuous Collector Current at 25 C:

12 A

Pd - Power Dissipation:

88 W

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Series:

STGP6M65DF2

Continuous Collector Current Ic Max:

12 A

Brand:

STMicroelectronics

Gate-Emitter Leakage Current:

+/- 250 uA

Product Type:

IGBT Transistors

Factory Pack Quantity:

1000

Subcategory:

IGBTs

Unit Weight:

0.063493 oz

Tags

STGP6, STGP, STG