BD237G

BD237G
Mfr. #:
BD237G
メーカー:
ON Semiconductor
説明:
Bipolar Transistors - BJT 2A 80V 25W NPN
ライフサイクル:
メーカー新製品
データシート:
BD237G データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BD237G DatasheetBD237G Datasheet (P4-P5)
ECAD Model:
製品属性
属性値
メーカー:
オン・セミコンダクター
製品カテゴリ:
バイポーラトランジスタ-BJT
JBoss:
Y
取り付けスタイル:
スルーホール
パッケージ/ケース:
TO-225-3
トランジスタの極性:
NPN
構成:
独身
コレクター-エミッター電圧VCEOMax:
80 V
コレクター-ベース電圧VCBO:
100 V
エミッタ-ベース電圧VEBO:
5 V
コレクター-エミッター飽和電圧:
0.6 V
最大DCコレクタ電流:
2 A
ゲイン帯域幅積fT:
3 MHz
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
シリーズ:
BD237
高さ:
11.04 mm
長さ:
7.74 mm
包装:
バルク
幅:
2.66 mm
ブランド:
オン・セミコンダクター
連続コレクタ電流:
2 A
DCコレクター/ベースゲインhfe最小:
40
Pd-消費電力:
25 W
製品タイプ:
BJT-バイポーラトランジスタ
ファクトリーパックの数量:
500
サブカテゴリ:
トランジスタ
単位重量:
0.023986 oz
Tags
BD237, BD23, BD2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    L***r
    L***r
    LK

    item as described

    2019-07-04
    A***h
    A***h
    BY

    ok

    2019-02-08
    I***v
    I***v
    RU

    good deal, thanks to the seller.

    2019-05-12
***Semiconductor
2.0 A, 80 V, 25W NPN Bipolar Power Transistor
***ure Electronics
BD Series 80 V 2 A NPN Plastic Medium Power Transistor - TO-225
***p One Stop Global
Trans GP BJT NPN 80V 2A 25000mW 3-Pin(3+Tab) TO-225 Box
***Components
In a Pack of 25, ON Semiconductor, BD237G NPN Digital Transistor, 2 A 80 V dc, Single, 3-Pin TO-225
***et Europe
Trans GP BJT NPN 80V 2A 3-Pin TO-225 Bulk
***i-Key
TRANS NPN 80V 2A TO-225
***th Star Micro
. . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers util complementary or quasi complementary circuits.
***ark
Bipolar Transistor, Npn, 80V To-225; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:80V; Transition Frequency Ft:3Mhz; Power Dissipation Pd:25W; Dc Collector Current:2A; Dc Current Gain Hfe:3Hfe; No. Of Pins:3Pins; Msl:-Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. TRANSISTOR, NPN, TO-126; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:3MHz; Power Dissipation Pd:25W; DC Collector Current:2A; DC Current Gain hFE:3hFE; Transistor Case Style:TO-225AA; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):600mV; Continuous Collector Current Ic Max:2A; Current Ic Continuous a Max:2A; Current Ic hFE:1A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:3MHz; Gain Bandwidth ft Typ:3MHz; Hfe Min:25; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:26W; Voltage Vcbo:100V
***nell
TRANSISTOR, NPN, TO-126; Polarità Transistor:NPN; Tensione Collettore-Emettitore V(br)ceo:80V; Frequenza di Transizione ft:3MHz; Dissipazione di Potenza Pd:25W; Corrente di Collettore CC:2A; Guadagno di Corrente CC hFE:3hFE; Modello Case Transistor:TO-225AA; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Continua di Collettore Ic Max:2A; Corrente Ic Continua a Max:2A; Corrente Ic hFE:1A; Dissipazione di Potenza Ptot Max:26W; Hfe Min.:25; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Larghezza di Banda Guadagno ft Min:3MHz; Larghezza di Banda Guadagno ft Typ:3MHz; Livello Temperatura a Piena Potenza:25°C; No. di Transistor:1; Temperatura di Esercizio Min:-55°C; Tensione Saturaz Collettore-Emettitore Vce(on):600mV; Tensione Vcbo:100V
モデル メーカー 説明 ストック 価格
BD237G
DISTI # V36:1790_07322887
ON SemiconductorTrans GP BJT NPN 80V 2A 3-Pin(3+Tab) TO-225 Box
RoHS: Compliant
70
  • 50000:$0.1792
  • 25000:$0.1826
  • 10000:$0.1917
  • 2500:$0.2000
  • 1000:$0.2159
  • 500:$0.2852
BD237G
DISTI # BD237GOS-ND
ON SemiconductorTRANS NPN 80V 2A TO-225
RoHS: Compliant
Min Qty: 1
Container: Bulk
2085In Stock
  • 1000:$0.2635
  • 500:$0.3410
  • 100:$0.4339
  • 10:$0.5810
  • 1:$0.6800
BD237G
DISTI # 25633086
ON SemiconductorTrans GP BJT NPN 80V 2A 3-Pin(3+Tab) TO-225 Box
RoHS: Compliant
72500
  • 2500:$0.1872
BD237G
DISTI # 21062228
ON SemiconductorTrans GP BJT NPN 80V 2A 3-Pin(3+Tab) TO-225 Box
RoHS: Compliant
2000
  • 500:$0.1968
BD237G
DISTI # 19257514
ON SemiconductorTrans GP BJT NPN 80V 2A 3-Pin(3+Tab) TO-225 Box
RoHS: Compliant
908
  • 305:$0.2050
BD237G
DISTI # 26065384
ON SemiconductorTrans GP BJT NPN 80V 2A 3-Pin(3+Tab) TO-225 Box
RoHS: Compliant
70
  • 70:$0.4682
BD237G
DISTI # BD237G
ON SemiconductorTrans GP BJT NPN 80V 2A 3-Pin TO-225 Bulk - Bulk (Alt: BD237G)
RoHS: Compliant
Min Qty: 2500
Container: Bulk
Americas - 0
  • 2500:$0.1919
  • 3500:$0.1909
  • 6000:$0.1889
  • 12500:$0.1859
  • 25000:$0.1819
BD237G
DISTI # 26K3499
ON SemiconductorTrans GP BJT NPN 80V 2A 3-Pin TO-225 Bulk - Bulk (Alt: 26K3499)
RoHS: Compliant
Min Qty: 1
Container: Bulk
Americas - 0
  • 1:$0.6500
  • 10:$0.5330
  • 100:$0.3250
  • 500:$0.2880
  • 1000:$0.2510
  • 2500:$0.2150
  • 10000:$0.2000
BD237G
DISTI # 26K3499
ON SemiconductorBIPOLAR TRANSISTOR, NPN, 80V TO-225,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:80V,Transition Frequency ft:3MHz,Power Dissipation Pd:25W,DC Collector Current:2A,DC Current Gain hFE:3hFE,No. of Pins:3Pins,MSL:-, RoHS Compliant: Yes908
  • 1:$0.1640
  • 10:$0.1640
  • 100:$0.1640
  • 500:$0.1640
  • 1000:$0.1640
  • 2500:$0.1640
  • 10000:$0.1640
BD237GON Semiconductor 
RoHS: Not Compliant
11985
  • 1000:$0.2400
  • 500:$0.2500
  • 100:$0.2600
  • 25:$0.2700
  • 1:$0.2900
BD237G
DISTI # 863-BD237G
ON SemiconductorBipolar Transistors - BJT 2A 80V 25W NPN
RoHS: Compliant
719
  • 1:$0.6500
  • 10:$0.5330
  • 100:$0.3250
  • 1000:$0.2510
  • 2500:$0.2150
  • 10000:$0.2000
  • 25000:$0.1890
BD237
DISTI # 863-BD237
ON SemiconductorBipolar Transistors - BJT 2A 80V 25W NPN
RoHS: Not compliant
0
    BD237GON Semiconductor 
    RoHS: Compliant
    Europe - 180
      BD237GON SemiconductorINSTOCK3182
        BD237GON SemiconductorINSTOCK4167
          BD237G
          DISTI # XSFP00000072520
          ON SEMICONDUCTORPowerBipolarTransistor,2AI(C),80VV(BR)CEO,1-Element,NPN,Silicon,TO-225AA,Plastic/Epoxy, 3Pin
          RoHS: Compliant
          2355
          • 500:$0.4200
          • 2355:$0.3818
          BD237G
          DISTI # 9557571
          ON SemiconductorTRANSISTOR, NPN, TO-126
          RoHS: Compliant
          770
          • 5:£0.4600
          • 25:£0.4270
          • 100:£0.2480
          • 250:£0.2200
          • 500:£0.1930
          BD237GON SemiconductorPlastic Medium Power Silicon NPN Transistor3600
          • 1:$0.3700
          • 100:$0.2900
          • 500:$0.2600
          • 1000:$0.2400
          BD237G
          DISTI # 9557571
          ON SemiconductorTRANSISTOR, NPN, TO-126
          RoHS: Compliant
          340
          • 1:$1.0300
          • 10:$0.8440
          • 100:$0.5150
          • 1000:$0.3970
          • 2500:$0.3410
          • 10000:$0.3170
          • 25000:$0.3000
          • 50000:$0.2930
          画像 モデル 説明
          EFR32MG12P433F1024GM48-C

          Mfr.#: EFR32MG12P433F1024GM48-C

          OMO.#: OMO-EFR32MG12P433F1024GM48-C

          RF System on a Chip - SoC Mighty Gecko SoC QFN48 dual 19 dB mesh multi-protocol 1024 kB 256 kB (RAM) 31GPIO
          2N6027

          Mfr.#: 2N6027

          OMO.#: OMO-2N6027

          SCRs Prog Uni-Junction
          2N6405G

          Mfr.#: 2N6405G

          OMO.#: OMO-2N6405G

          SCRs 800V 16A
          BAV21-TR

          Mfr.#: BAV21-TR

          OMO.#: OMO-BAV21-TR

          Diodes - General Purpose, Power, Switching 250V If/250mA T/R
          BYV16-TAP

          Mfr.#: BYV16-TAP

          OMO.#: OMO-BYV16-TAP

          Rectifiers 1000 Volt 1.5 Amp 40 Amp IFSM
          OPA189IDR

          Mfr.#: OPA189IDR

          OMO.#: OMO-OPA189IDR-TEXAS-INSTRUMENTS

          36V ZERO DRIFT OP-AMP
          EFR32MG12P433F1024GM48-C

          Mfr.#: EFR32MG12P433F1024GM48-C

          OMO.#: OMO-EFR32MG12P433F1024GM48-C-SILICON-LABS

          Mighty Premium QFN48 Dual 19dB Mesh Multi-Protocol 1024kB 256kB(RAM) 28GPIO
          2N6405G

          Mfr.#: 2N6405G

          OMO.#: OMO-2N6405G-LITTELFUSE

          SCRs 800V 16A
          2N6027

          Mfr.#: 2N6027

          OMO.#: OMO-2N6027-CENTRAL-SEMICONDUCTOR

          SCRs Prog Uni-Junction
          BAV21-TR

          Mfr.#: BAV21-TR

          OMO.#: OMO-BAV21-TR-VISHAY

          Diodes - General Purpose, Power, Switching 250V If/250mA T/R
          可用性
          ストック:
          385
          注文中:
          2368
          数量を入力してください:
          BD237Gの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
          参考価格(USD)
          単価
          小計金額
          1
          $0.65
          $0.65
          10
          $0.53
          $5.33
          100
          $0.32
          $32.50
          1000
          $0.25
          $251.00
          2500
          $0.22
          $537.50
          10000
          $0.20
          $2 000.00
          25000
          $0.19
          $4 725.00
          50000
          $0.18
          $9 250.00
          2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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