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FDMA2002NZ

FDMA2002NZ
Mfr. #:
FDMA2002NZ
メーカー:
ON Semiconductor / Fairchild
説明:
MOSFET 30V Dual N-Channel PowerTrench MOSFET
ライフサイクル:
メーカー新製品
データシート:
FDMA2002NZ データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
詳しくは:
FDMA2002NZ 詳しくは
製品属性
属性値
メーカー：
オン・セミコンダクター
製品カテゴリ：
MOSFET
JBoss：
Y
テクノロジー：
Si
取り付けスタイル：
SMD / SMT
パッケージ/ケース：
MicroFET-6
チャネル数：
2 Channel
トランジスタの極性：
Nチャネル
Vds-ドレイン-ソース間降伏電圧：
30 V
Id-連続ドレイン電流：
2.9 A
Rds On-ドレイン-ソース抵抗：
75 mOhms
Vgs-ゲート-ソース間電圧：
12 V
最低動作温度：
- 55 C
最高作動温度：
+ 150 C
Pd-消費電力：
1.5 W
構成：
デュアル
チャネルモード：
強化
商標名：
PowerTrench
包装：
リール
高さ：
0.75 mm
長さ：
2 mm
製品：
MOSFET小信号
シリーズ：
FDMA2002NZ
トランジスタタイプ：
2 N-Channel
タイプ：
MOSFET
幅：
2 mm
ブランド：
オン・セミコンダクター/フェアチャイルド
立ち下がり時間：
8 ns
製品タイプ：
MOSFET
立ち上がり時間：
8 ns
ファクトリーパックの数量：
3000
サブカテゴリ：
MOSFET
典型的なターンオフ遅延時間：
12 ns
典型的なターンオン遅延時間：
6 ns
単位重量：
0.001411 oz
Tags
FDMA20, FDMA2, FDMA, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
Transistor MOSFET Array Dual N-CH 30V 2.9A 6-Pin MicroFET T/R - Tape and Reel
***emi
Dual N-Channel PowerTrench® MOSFET 30V, 2.9A, 123mΩ
***r Electronics
Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229VCCC
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:2.9A; On Resistance, Rds(on):0.123ohm; Rds(on) Test Voltage, Vgs:1V; Threshold Voltage, Vgs Typ:12V ;RoHS Compliant: Yes
***rchild Semiconductor
This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
***nell
MOSFET, DUAL, N, MLP6; Transistor Type:MOSFET; Transistor Polarity:Dual N; Voltage, Vds Typ:30V; Current, Id Cont:2.9A; Resistance, Rds On:0.123ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:1V; Case Style:MLP-6; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:10A; No. of Pins:8; Power Dissipation:1.5W; Power, Pd:1.5W; SMD Marking:002; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Voltage, Vds Max:30V; Voltage, Vgs th N Channel 1 min:0.4V
***emi
Integrated N-Channel PowerTrench®MOSFET and Schottky Diode 30 V, 2.9 A, 123 mΩ
***ment14 APAC
MOSFET, N, MLP6; Transistor Polarity:N Channel; Continuous Drain Current Id:2.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):123mohm; Rds(on) Test Voltage Vgs:1V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.9A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:MLP-6; Power Dissipation Pd:1.5W; Power Dissipation Pd:1.5W; Pulse Current Idm:10A; SMD Marking:109; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and onstate resistance, and an independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.1Ohm;ID 3.2A;Micro6 (SOT-23);PD 1.7W;-55de
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package, TSOP6L, RoHS
***p One Stop
Trans MOSFET N-CH Si 30V 3.2A 6-Pin TSOP T/R
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.2A; On Resistance Rds(On):0.1Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; No. Of Pins:6Pinsrohs Compliant: Yes
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: DC Switches; Load Switch
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 3.2 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 100 / Gate-Source Voltage V = 20 / Fall Time ns = 2 / Rise Time ns = 4.4 / Turn-OFF Delay Time ns = 10 / Turn-ON Delay Time ns = 4.6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TSOP6 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.7
***nell
MOSFET, N LOGIC MICRO-6; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.2A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 1.7W; Transistor Case Style: µSOIC; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Capacitance Ciss Typ: 210pF; Charge Qrr @ Tj = 25°C Typ: 39nC; Current Temperature: 25°C; External Depth: 3mm; External Length / Height: 1.45mm; External Width: 3mm; Full Power Rating Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; N-channel Gate Charge: 6.4nC; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 18A; Rate of Voltage Change dv / dt: 5V/ns; Reverse Recovery Time trr Typ: 36ns; SMD Marking: 2B; Termination Type: Surface Mount Device; Voltage Vds: 30V; Voltage Vgs th Min: 1V
***ure Electronics
Dual N-Channel 30 V 63 mOhm 2.8 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm
***ineon SCT
30V Dual N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package, PG-TSDSON-6, RoHS
***et Europe
Transistor MOSFET Array Dual N-CH 30V 3.4A 6-Pin PQFN T/R
***p One Stop
Trans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Dual N-Channel MOSFET | Target Applications: DC Switches; Load Switch
***ment14 APAC
DUAL N CH, 30V, 3.6A, PQFN-6; Transistor; DUAL N CH, 30V, 3.6A, PQFN-6; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:3.6A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.048ohm; Rds(on) Test Voltage Vgs:4.5V
***ark
MOSFET Transistor, N Channel, 3.4 A, 30 V, 0.046 ohm, 4.5 V, 800 mV
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
***ure Electronics
Single N-Channel 30 V 80 mOhm 2.9 nC HEXFET® Power Mosfet - SOT-23
*** Source Electronics
MOSFET N-CH 30V 3.4A SOT23 / Trans MOSFET N-CH 30V 3.4A 3-Pin SOT-23 T/R
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W
***ineon
Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
***nell
MOSFET,N CH,30V,3.3A,SOT23; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.046ohm; Rds(on) Test Voltage Vgs:4.5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:3.4A; Power Dissipation Pd:1.3W; Voltage Vgs Max:12V
*** Source Electronics
Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R / MOSFET N/P-CH 30V 6TSOP
***enic
30V 2.5A 105m´Î@10V2.5A 1.15W 1V@250Ã×A 1PCSN-Channel&1PCSP-Channel TSOP-6 MOSFETs ROHS
***(Formerly Allied Electronics)
MOSFET; Dual; Complementary; 30V; 2.5/1.8A; TSOP-6
***roFlash
Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
Mosfet, N & P Channel, 30V, 2.5A, Tsop-6, Full Reel; Transistor Polarity:complementary N And P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.5A; On Resistance Rds(On):0.085Ohm; Transistor Mounting:surface Mountrohs Compliant: No
***nell
MOSFET, N & P-CH, 30V, 2.5A, TSOP; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 2.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 1.15W; Transistor Case Style: TSOP; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
*** Source Electronics
MOSFET N/P-CH 30V 6-TSOP / Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R
***nell
DUAL N/P CHANNEL MOSFET, 30V, TSOP
***ark
Transistor; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Threshold Voltage, Vgs Typ:1V; Operating Temperature Range:-55°C to +150°C; Package/Case:6-TSOP; Termination Type:SMD; Transistor Type:MOSFET ;RoHS Compliant: Yes
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
モデル メーカー 説明 ストック 価格
FDMA2002NZ
DISTI # V36:1790_06337795		ON SemiconductorMLP6, 30V, 2.9A, DUAL, NCH POW6000
  • 45000:$0.1969
  • 24000:$0.1988
  • 9000:$0.2047
  • 3000:$0.2146
FDMA2002NZ
DISTI # V72:2272_06337795		ON SemiconductorMLP6, 30V, 2.9A, DUAL, NCH POW471
  • 250:$0.2849
  • 100:$0.3167
  • 25:$0.4396
  • 10:$0.5373
  • 1:$0.6413
FDMA2002NZ
DISTI # FDMA2002NZCT-ND		ON SemiconductorMOSFET 2N-CH 30V 2.9A 6-MICROFET
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		20899In Stock
  • 1000:$0.2751
  • 500:$0.3439
  • 100:$0.4351
  • 10:$0.5670
  • 1:$0.6400
FDMA2002NZ
DISTI # FDMA2002NZDKR-ND		ON SemiconductorMOSFET 2N-CH 30V 2.9A 6-MICROFET
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		20899In Stock
  • 1000:$0.2751
  • 500:$0.3439
  • 100:$0.4351
  • 10:$0.5670
  • 1:$0.6400
FDMA2002NZ
DISTI # FDMA2002NZTR-ND		ON SemiconductorMOSFET 2N-CH 30V 2.9A 6-MICROFET
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		18000In Stock
  • 30000:$0.2115
  • 15000:$0.2170
  • 6000:$0.2254
  • 3000:$0.2421
FDMA2002NZ_F130
DISTI # FDMA2002NZ_F130-ND		ON SemiconductorINTEGRATED CIRCUIT
RoHS: Compliant
Container: Bulk		Limited Supply - Call
    FDMA2002NZ
    DISTI # 33688815    		ON SemiconductorMLP6, 30V, 2.9A, DUAL, NCH POW354000
    • 3000:$0.2146
    FDMA2002NZ
    DISTI # 32528435    		ON SemiconductorMLP6, 30V, 2.9A, DUAL, NCH POW9000
    • 3000:$0.2122
    FDMA2002NZ
    DISTI # 33128677    		ON SemiconductorMLP6, 30V, 2.9A, DUAL, NCH POW6000
    • 3000:$0.2146
    FDMA2002NZ
    DISTI # 30208331    		ON SemiconductorMLP6, 30V, 2.9A, DUAL, NCH POW471
    • 32:$0.6413
    FDMA2002NZ
    DISTI # FDMA2002NZ    		ON SemiconductorTrans MOSFET N-CH 30V 2.9A 6-Pin MicroFET T/R (Alt: FDMA2002NZ)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 18000
    • 30000:€0.1969
    • 18000:€0.2119
    • 12000:€0.2299
    • 6000:€0.2509
    • 3000:€0.3069
    FDMA2002NZ
    DISTI # FDMA2002NZ    		ON SemiconductorTrans MOSFET N-CH 30V 2.9A 6-Pin MicroFET T/R - Tape and Reel (Alt: FDMA2002NZ)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$0.1959
    • 18000:$0.2009
    • 12000:$0.2029
    • 6000:$0.2059
    • 3000:$0.2069
    FDMA2002NZ
    DISTI # FDMA2002NZ    		ON SemiconductorTrans MOSFET N-CH 30V 2.9A 6-Pin MicroFET T/R - Bulk (Alt: FDMA2002NZ)
    Min Qty: 1389
    Container: Bulk    		Americas - 0
    • 13890:$0.2219
    • 6945:$0.2269
    • 4167:$0.2299
    • 2778:$0.2329
    • 1389:$0.2349
    FDMA2002NZ
    DISTI # FDMA2002NZ    		ON SemiconductorTrans MOSFET N-CH 30V 2.9A 6-Pin MicroFET T/R (Alt: FDMA2002NZ)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Asia - 0
    • 150000:$0.2607
    • 75000:$0.2650
    • 30000:$0.2741
    • 15000:$0.2839
    • 9000:$0.2944
    • 6000:$0.3058
    • 3000:$0.3180
    FDMA2002NZ
    DISTI # 76M7880    		ON SemiconductorDUAL N MOSFET 30V 2.9A MICROFET 2X2,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:2.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.123ohm,Rds(on) Test Voltage Vgs:1V,Threshold Voltage Vgs:12V RoHS Compliant: Yes0
    • 1000:$0.2670
    • 500:$0.2880
    • 250:$0.3090
    • 100:$0.3300
    • 50:$0.4180
    • 25:$0.5050
    • 1:$0.6120
    FDMA2002NZ
    DISTI # 20M1166    		ON SemiconductorTRANSISTOR ARRAY, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:2.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.075ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,Product Range:-RoHS Compliant: Yes0
    • 24000:$0.2110
    • 9000:$0.2190
    • 1:$0.2270
    FDMA2002NZ
    DISTI # 512-FDMA2002NZ    		ON SemiconductorMOSFET 30V Dual N-Channel PowerTrench MOSFET
    RoHS: Compliant    		48260
    • 1:$0.5900
    • 10:$0.4930
    • 100:$0.3180
    • 1000:$0.2550
    • 3000:$0.2150
    • 9000:$0.2070
    • 24000:$0.1990
    FDMA2002NZFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 2.9A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229VCCC
    RoHS: Compliant    		93000
    • 1000:$0.2400
    • 500:$0.2500
    • 100:$0.2600
    • 25:$0.2700
    • 1:$0.2900
    FDMA2002NZFairchild Semiconductor Corporation2900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-229VCCC70
    • 45:$0.3000
    • 9:$0.4500
    • 1:$0.6000
    FDMA2002NZ
    DISTI # 1324793    		ON Semiconductor 
    RoHS: Compliant    		0
    • 9000:$0.3190
    • 3000:$0.3310
    • 1000:$0.3920
    • 100:$0.4890
    • 10:$0.7580
    • 1:$0.9070
    画像 モデル 説明
    FDMA1032CZ

    Mfr.#: FDMA1032CZ

    OMO.#: OMO-FDMA1032CZ

    		 MOSFET 20V Complementary PowerTrench MOSFET
    FDMA3027PZ

    Mfr.#: FDMA3027PZ

    OMO.#: OMO-FDMA3027PZ

    		 MOSFET -30V Dual P-Channel PowerTrench MOSFET
    MBR0530T1G

    Mfr.#: MBR0530T1G

    OMO.#: OMO-MBR0530T1G

    		 Schottky Diodes & Rectifiers 0.5A 30V
    SBR05M60BLP-7

    Mfr.#: SBR05M60BLP-7

    OMO.#: OMO-SBR05M60BLP-7

    		 Schottky Diodes & Rectifiers 0.5A 50V
    FDMA3023PZ

    Mfr.#: FDMA3023PZ

    OMO.#: OMO-FDMA3023PZ

    		 MOSFET 30V 2.9A Dual P Ch PowerTrench
    PIC16F18424-I/JQ

    Mfr.#: PIC16F18424-I/JQ

    OMO.#: OMO-PIC16F18424-I-JQ

    		 8-bit Microcontrollers - MCU 7KB, 512B RAM, 2xPWMs, Comparator, DAC, 12-bit ADCC, CWG, EUSART, SPI/I2C
    PIC16F18424-I/JQ

    Mfr.#: PIC16F18424-I/JQ

    OMO.#: OMO-PIC16F18424-I-JQ-MICROCHIP-TECHNOLOGY

    		 MCU 8-bit PIC RISC 7KB Flash 3.3V/5V 16-Pin UQFN Tube
    CRCW060310K0FKEAC

    Mfr.#: CRCW060310K0FKEAC

    OMO.#: OMO-CRCW060310K0FKEAC-VISHAY-DALE

    		 D11/CRCW0603-C 100 10K 1% ET1
    FDMA1032CZ

    Mfr.#: FDMA1032CZ

    OMO.#: OMO-FDMA1032CZ-ON-SEMICONDUCTOR

    		 MOSFET N/P-CH 20V MICROFET 2X2
    FDMA3023PZ

    Mfr.#: FDMA3023PZ

    OMO.#: OMO-FDMA3023PZ-ON-SEMICONDUCTOR

    		 MOSFET 2P-CH 30V 2.9A MICROFET6
    可用性
    ストック:
    47
    注文中:
    2030
    数量を入力してください:
    FDMA2002NZの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格（USD）
    量
    単価
    小計金額
    1
    $0.59
    $0.59
    10
    $0.49
    $4.93
    100
    $0.32
    $31.80
    1000
    $0.26
    $255.00
    2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
    皮切りに
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