QS6Z5TR

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

Bipolar Transistors - BJT

Mounting Style:

SMD/SMT

Package / Case:

SOT-457T-6

Transistor Polarity:

NPN, PNP

Configuration:

Dual

Collector- Emitter Voltage VCEO Max:

50 V

Collector- Base Voltage VCBO:

50 V

Emitter- Base Voltage VEBO:

6 V

Collector-Emitter Saturation Voltage:

130 mV, - 200 mV

Maximum DC Collector Current:

1 A, - 1 A

Gain Bandwidth Product fT:

360 MHz, 400 MHz

Maximum Operating Temperature:

+ 150 C

DC Current Gain hFE Max:

450 at 50 mA, 2 V, 450 at - 50 mA, - 2 V

Packaging:

Reel

Brand:

ROHM Semiconductor

Continuous Collector Current:

1 A, - 1 A

DC Collector/Base Gain hfe Min:

180 at 50 mA, 2 V, 180 at - 50 mA, - 2 V

Pd - Power Dissipation:

1.25 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

3000

Subcategory:

Transistors

Part # Aliases:

QS6Z5

Tags

QS6