CSD23201W10

Mfr. #:: CSD23201W10
説明:: MOSFET P-CH 12V 2.2A 4DSBGA
ライフサイクル:: メーカー新製品
データシート:: CSD23201W10 データシート
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詳しくは:: CSD23201W10 詳しくは CSD23201W10 Product Details

製品属性
属性値

メーカー: TI

製品カテゴリ: FET-シングル

Tags: CSD2320, CSD232, CSD23, CSD2, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD23201W10 説明

***as Instruments: P-Channel NexFET Power MOSFET 4-DSBGA -55 to 150

***ark: P CHANNEL MOSFET, NEXFET, -12V, -2.2A, DSBGA-4

***et Europe: Trans MOSFET P-CH 12V 2.2A 4-Pin WLCSP T/R

***i-Key: MOSFET P-CH 12V 2.2A 4DSBGA

***th Star Micro: the device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.

***ment14 APAC: Prices include import duty and tax. FET, P CH, SINGLE, 12V, 4DSBGA; Transistor Polarity:P Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.066ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:600mV; Power Dissipation Pd:1W; Transistor Case Style:DSBGA; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:-2.2A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:12V; Voltage Vgs Max:-6V; Voltage Vgs Rds on Measurement:4.5V

***nell: FET, P CH, SINGOLO, 12V, 4DSBGA; Polarità Transistor:Canale P; Corrente Continua di Drain Id:1.1A; Tensione Drain Source Vds:-12V; Resistenza di Attivazione Rds(on):0.066ohm; Tensione Vgs di Misura Rds(on):-4.5V; Tensione di Soglia Vgs:600mV; Dissipazione di Potenza Pd:1W; Modello Case Transistor:DSBGA; No. di Pin:4Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:-2.2A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Temperatura di Esercizio Min:-55°C; Tensione Vds Tipica:12V; Tensione Vgs Max:-6V; Tensione Vgs di Misurazione Rds on:4.5V; Tipo di Terminazione:Dispositivo a Montaggio Superficiale; Tipo di Transistor:Power MOSFET

Market price

モデル	説明	ストック	価格
CSD23201W10 DISTI # 296-24258-2-ND	MOSFET P-CH 12V 2.2A 4DSBGA RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
CSD23201W10 DISTI # 296-24258-1-ND	MOSFET P-CH 12V 2.2A 4DSBGA RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
CSD23201W10 DISTI # 296-24258-6-ND	MOSFET P-CH 12V 2.2A 4DSBGA RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
CSD23201W10 DISTI # CSD23201W10	Trans MOSFET P-CH 12V 2.2A 4-Pin WLCSP T/R (Alt: CSD23201W10) RoHS: Compliant Min Qty: 1250	Americas - 0	1250:$0.2899 1252:$0.2759 2502:$0.2669 6250:$0.2579 12500:$0.2499
CSD23201W10 DISTI # 595-CSD23201W10	MOSFET P-Ch NexFET Power MOSFETs RoHS: Compliant	0
CSD23201W10	Small Signal Field-Effect Transistor, 2.2A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	459193	1000:$0.2900 500:$0.3100 100:$0.3200 25:$0.3400 1:$0.3600
CSD23201W10	2200 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	240	57:$0.6300 12:$0.9000 1:$1.8000
CSD23201W10 DISTI # 1710777RL	FET, P CH, SINGLE, 12V, 4DSBGA RoHS: Compliant	0	1:$1.0300 10:$0.8950 100:$0.7300 500:$0.6170 1000:$0.5440 3000:$0.4870 9000:$0.4210 24000:$0.4150
CSD23201W10 DISTI # 1710777	FET, P CH, SINGLE, 12V, 4DSBGA RoHS: Compliant	0	1:$1.0300 10:$0.8950 100:$0.7300 500:$0.6170 1000:$0.5440 3000:$0.4870 9000:$0.4210 24000:$0.4150

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