FCH041N65F-F155

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-247-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

650 V

Id - Continuous Drain Current:

76 A

Rds On - Drain-Source Resistance:

41 mOhms

Vgs th - Gate-Source Threshold Voltage:

5 V

Vgs - Gate-Source Voltage:

20 V, 30 V

Qg - Gate Charge:

226 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

595 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

SuperFET II

Packaging:

Tube

Height:

20.82 mm

Length:

15.87 mm

Series:

FCH041N65F

Transistor Type:

1 N-Channel

Width:

4.82 mm

Brand:

ON Semiconductor / Fairchild

Forward Transconductance - Min:

18 S

Fall Time:

6.5 ns

Product Type:

MOSFET

Rise Time:

47 ns

Factory Pack Quantity:

450

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

190 ns

Typical Turn-On Delay Time:

60 ns

Part # Aliases:

FCH041N65F_F155

Unit Weight:

0.225401 oz

Tags

FCH041N65F-F, FCH041N65F, FCH041N65, FCH041, FCH04, FCH0, FCH