FQB5N80TM

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

E

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-263-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

800 V

Id - Continuous Drain Current:

4.8 A

Rds On - Drain-Source Resistance:

2.6 Ohms

Vgs - Gate-Source Voltage:

30 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

3.13 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

4.83 mm

Length:

10.67 mm

Transistor Type:

1 N-Channel

Width:

9.65 mm

Brand:

ON Semiconductor / Fairchild

Fall Time:

40 ns

Product Type:

MOSFET

Rise Time:

60 ns

Factory Pack Quantity:

800

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

55 ns

Typical Turn-On Delay Time:

22 ns

Unit Weight:

0.139332 oz

Tags

FQB5N8, FQB5N, FQB5, FQB