SP000216320

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

800 V

Id - Continuous Drain Current:

11 A

Rds On - Drain-Source Resistance:

390 mOhms

Vgs th - Gate-Source Threshold Voltage:

2.1 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

85 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

34 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

15.65 mm

Length:

10 mm

Series:

XPA11N80

Transistor Type:

1 N-Channel

Width:

4.4 mm

Brand:

Infineon Technologies

Fall Time:

10 ns

Product Type:

MOSFET

Rise Time:

15 ns

Factory Pack Quantity:

500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

72 ns

Typical Turn-On Delay Time:

25 ns

Part # Aliases:

SP000216320 SPA11N80C3 SPA11N80C3XKSA1 XPA11N80

Unit Weight:

0.063493 oz

Tags

SP0002, SP000, SP00, SP0