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IRFP048RPBF

IRFP048RPBF
Mfr. #:
IRFP048RPBF
メーカー:
Vishay / Siliconix
説明:
MOSFET N-Chan 60V 70 Amp
ライフサイクル:
メーカー新製品
データシート:
IRFP048RPBF データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー：
ビシェイ
製品カテゴリ：
MOSFET
JBoss：
E
テクノロジー：
Si
取り付けスタイル：
スルーホール
パッケージ/ケース：
TO-247-3
包装：
チューブ
高さ：
20.82 mm
長さ：
15.87 mm
シリーズ：
IRFP
幅：
5.31 mm
ブランド：
Vishay / Siliconix
製品タイプ：
MOSFET
ファクトリーパックの数量：
500
サブカテゴリ：
MOSFET
単位重量：
1.340411 oz
Tags
IRFP048, IRFP04, IRFP0, IRFP, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***-Wing Technology
Tube Through Hole N-Channel Single Mosfet Transistor 70A Tc 70A 190W 250ns
***ical
Trans MOSFET N-CH 60V 70A 3-Pin(3+Tab) TO-247AC
***nell
MOSFET, N, 60V, 70A, TO-247AC; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.018ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 190W; Transistor Case Style: TO-247AC; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Junction to Case Thermal Resistance A: 0.8°C/W; On State resistance @ Vgs = 10V: 18ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pulse Current Idm: 290A; Voltage Vds Typ: 60V; Voltage Vgs Rds on Measurement: 10V
***ure Electronics
Single N-Channel 60 V 0.018 Ohms Flange Mount Power Mosfet - TO-247
*** Stop Electro
Power Field-Effect Transistor, 70A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:60V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:190W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:70A; Package / Case:TO-247AC; Power Dissipation Pd:190W; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.016Ohm;ID 64A;TO-247AC;PD 140W;VGS +/-20V
***ure Electronics
Single N-Channel 55 V 16 mOhm 59.3 nC HEXFET® Power Mosfet - TO247AC
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:55V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:130W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:64A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Pulse Current Idm:210A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.012Ohm;ID 81A;TO-247AC;PD 170W;VGS +/-20V
***fin
Transistor NPN Field Effect IRFP054/IRFP054N INTERNATIONAL RECTIFIER Ampere=70 V=60 TO3P
***ure Electronics
Single N-Channel 55 V 0.012 Ohm 130 nC HEXFET® Power Mosfet - TO-247AC
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:72A; Drain Source Voltage Vds:55V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:130W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:81A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Pulse Current Idm:290A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 60 V 0.014 Ohms Flange Mount Power Mosfet - TO-247
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:70A; On Resistance, Rds(on):14mohm; Rds(on) Test Voltage, Vgs:10V; Drain Source On Resistance @ 10V:14mohm RoHS Compliant: Yes
***nell
MOSFET, N, 60V, 70A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:70A; Resistance, Rds On:0.014ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:360A; Power Dissipation:230W; Power, Pd:230W; Resistance, Rds on @ Vgs = 10V:14ohm; Thermal Resistance, Junction to Case A:0.65°C/W; Voltage, Vds Max:60V
***ure Electronics
Single N-Channel 60 V 0.009 Ohms Flange Mount Power Mosfet - TO-247
***nell
N CHANNEL MOSFET, 60V, 70A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 9mohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs Typ: 4V
*** Stop Electro
Power Field-Effect Transistor, 70A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***(Formerly Allied Electronics)
MOSFET, Power; N-Channel; 0.020 Ohms (Max.) @ 10 V, 29 A; 55 V (Min.); 40 degC/
*** Electronics
Transistor MOSFET Negative Channel 55 Volt 53A 3-Pin(3+Tab) TO-247AC
***ure Electronics
Single N-Channel 55 V 0.02 Ohm 61 nC HEXFET® Power Mosfet - TO-247AC
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 53A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:53A; On Resistance, Rds(on):20mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes
***nell
MOSFET, N, TO-247; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:49A; Resistance, Rds On:0.02ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:180A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:100W; Power, Pd:100W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:55V
モデル メーカー 説明 ストック 価格
IRFP048RPBF
DISTI # IRFP048RPBF-ND		Vishay SiliconixMOSFET N-CH 60V 70A TO-247AC
RoHS: Compliant
Min Qty: 500
Container: Tube		Temporarily Out of Stock
  • 500:$3.3215
IRFP048RPBF
DISTI # IRFP048RPBF		Vishay IntertechnologiesTrans MOSFET N-CH 60V 70A 3-Pin(3+Tab) TO-247AC - Bulk (Alt: IRFP048RPBF)
RoHS: Not Compliant
Min Qty: 500
Container: Bulk		Americas - 0
  • 500:$3.1900
  • 1000:$3.1900
  • 2000:$3.1900
  • 3000:$3.1900
  • 5000:$3.1900
IRFP048RPBF
DISTI # 63J6837		Vishay IntertechnologiesN CHANNEL MOSFET, 60V, 70A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:70A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.018ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Product Range:-RoHS Compliant: Yes0
  • 1:$5.1000
  • 10:$4.2300
  • 25:$3.9800
  • 50:$3.7300
  • 100:$3.4800
  • 500:$3.0200
  • 1000:$2.5500
  • 2500:$2.4200
IRFP048RPBF
DISTI # 844-IRFP048RPBF		Vishay IntertechnologiesMOSFET N-Chan 60V 70 Amp
RoHS: Compliant		250
  • 1:$5.1000
  • 10:$4.2300
  • 100:$3.4800
  • 250:$3.3700
  • 500:$3.0200
  • 1000:$2.5500
  • 2500:$2.4200
IRFP048RPBF
DISTI # 8658358		Vishay Intertechnologies 
RoHS: Compliant		0
  • 1:$8.0800
  • 10:$6.6900
  • 100:$5.5100
  • 250:$5.3400
  • 500:$4.7800
  • 1000:$4.0400
  • 2500:$3.8400
  • 5000:$3.6900
IRFP048RPBFVishay IntertechnologiesMOSFET N-Chan 60V 70 Amp
RoHS: Compliant		Americas -
    画像 モデル 説明
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    		 ブランドニューオリジナル
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    IRFP054NPBF

    Mfr.#: IRFP054NPBF

    OMO.#: OMO-IRFP054NPBF-INFINEON-TECHNOLOGIES

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    IRFP064VPBF

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    可用性
    ストック:
    Available
    注文中:
    4500
    数量を入力してください:
    IRFP048RPBFの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格（USD）
    量
    単価
    小計金額
    1
    $5.09
    $5.09
    10
    $4.22
    $42.20
    100
    $3.47
    $347.00
    250
    $3.36
    $840.00
    500
    $3.01
    $1 505.00
    1000
    $2.54
    $2 540.00
    2500
    $2.41
    $6 025.00
    5000
    $2.32
    $11 600.00
    2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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