2N3036

Product Attribute

Attribute Value

Manufacturer:

Central Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

Through Hole

Package / Case:

TO-39-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

80 V

Collector- Base Voltage VCBO:

120 V

Emitter- Base Voltage VEBO:

5 V

Maximum DC Collector Current:

1.2 A

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Series:

2N3036

DC Current Gain hFE Max:

35

Height:

6.6 mm

Length:

9.4 mm

Width:

9.4 mm

Brand:

Central Semiconductor

DC Collector/Base Gain hfe Min:

20

Pd - Power Dissipation:

800 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

500

Subcategory:

Transistors

Tags

2N30, 2N3