STP26N60DM6

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

RoHS:

Y

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

18 A

Rds On - Drain-Source Resistance:

195 mOhms

Vgs th - Gate-Source Threshold Voltage:

3.25 V

Vgs - Gate-Source Voltage:

25 V

Qg - Gate Charge:

24 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

130 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Transistor Type:

1 N-Channel

Brand:

STMicroelectronics

Fall Time:

8 ns

Product Type:

MOSFET

Rise Time:

11 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

39 ns

Typical Turn-On Delay Time:

13 ns

Tags

STP26N6, STP26N, STP26, STP2, STP