2N2219Ae3

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-39-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

50 V

Collector- Base Voltage VCBO:

75 V

Emitter- Base Voltage VEBO:

6 V

Collector-Emitter Saturation Voltage:

0.3 V

Maximum DC Collector Current:

800 mA

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 200 C

DC Current Gain hFE Max:

325 at 1 mA, 10 V

Packaging:

Bulk

Brand:

Microchip / Microsemi

DC Collector/Base Gain hfe Min:

50 at 100 uA, 10 V

Pd - Power Dissipation:

3 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

1

Subcategory:

Transistors

Tags

2N2219Ae, 2N2219A, 2N2219, 2N221, 2N22, 2N2