DMN30H4D0LFDE-7

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

U-DFN2020-E-6

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

300 V

Id - Continuous Drain Current:

550 mA

Rds On - Drain-Source Resistance:

2.3 Ohms

Vgs th - Gate-Source Threshold Voltage:

1 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

7.6 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

1.98 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Series:

DMN30

Transistor Type:

1 N-Channel

Brand:

Diodes Incorporated

Fall Time:

17.5 ns

Product Type:

MOSFET

Rise Time:

4.7 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

25.8 ns

Typical Turn-On Delay Time:

4.9 ns

Tags

DMN30H4D0, DMN30H4, DMN30H, DMN30, DMN3, DMN