NSBC114YDXV6T5G

NSBC114YDXV6T5G
Mfr. #:
NSBC114YDXV6T5G
メーカー:
ON Semiconductor
説明:
Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
ライフサイクル:
メーカー新製品
データシート:
NSBC114YDXV6T5G データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NSBC114YDXV6T5G DatasheetNSBC114YDXV6T5G Datasheet (P4-P6)NSBC114YDXV6T5G Datasheet (P7-P8)
ECAD Model:
製品属性
属性値
メーカー:
オン・セミコンダクター
製品カテゴリ:
バイポーラトランジスタ-プリバイアス
JBoss:
Y
構成:
デュアル
トランジスタの極性:
NPN
一般的な入力抵抗:
10 kOhms
典型的な抵抗比:
0.21
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
SOT-563-6
DCコレクター/ベースゲインhfe最小:
80
コレクター-エミッター電圧VCEOMax:
50 V
連続コレクタ電流:
0.1 A
ピークDCコレクタ電流:
100 mA
Pd-消費電力:
357 mW
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
シリーズ:
NSBC114YDXV6
包装:
リール
DC電流ゲインhFEMax:
80
高さ:
0.55 mm
長さ:
1.6 mm
幅:
1.2 mm
ブランド:
オン・セミコンダクター
製品タイプ:
BJT-バイポーラトランジスタ-プリバイアス
ファクトリーパックの数量:
8000
サブカテゴリ:
トランジスタ
単位重量:
0.000106 oz
Tags
NSBC114YDX, NSBC114YD, NSBC114Y, NSBC114, NSBC11, NSBC, NSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans Digital BJT NPN 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
***emi
Dual NPN Bipolar Digital Transistor (BRT)
***ark
Brt Transistor, 50V, 47K/10Kohm, Sot-563; Transistor Polarity:dual Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:6 Pin Rohs Compliant: Yes
***ical
Trans Digital BJT NPN/PNP 50V 100mA 500mW 6-Pin SOT-563 T/R
*** Stop Electro
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***ure Electronics
Bipolar Transistors - Pre-Biased Dual Complementary NPN & PNP Digital
***emi
Complementary Bipolar Digital Transistor (BRT)
***ment14 APAC
Transistor, AEC-Q101, NPN/PNP, 50V, SOT-563; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous
***ark
Brt Transistor, 50V, 47K/10Kohm, Sot-553; Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:10Kohm Rohs Compliant: Yes
***nell
TRANS, AEC-Q101, NPN/PNP, 50V, SOT-563; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.21(Ratio); RF Transistor Case: SOT-563; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***th Star Micro
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the EMD4DXV6T1 series two complementary BRT devices are housed in the SOT-563 package which is ideal for low power surface mount applications where board space is at a premium.
***ical
Trans Digital BJT NPN/PNP 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***ponent Stockers USA
100 mA 50 V 2 CHANNEL NPN AND PNP Si SMALL SIGNAL TRANSISTOR
***enic
1 PCS NPN1 PCS PNP - Pre-Biased(Dual) 500mW 100mA 50V SOT-563 Digital Transistors ROHS
***emi
Complementary Bipolar Digital Transistor (BRT)
***ment14 APAC
TRANSISTOR, RF, NPN/PNP, 50V, SOT-563-6
***ure Electronics
NSBC114 Series 50 V 100 mA Complementary Bias Resistor Transistor - SOT-563
***ark
Brt Transistor, 50V, 47K/10Kohm, Sot-563, Full Reel; Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; No. Of Pins:6 Pin Rohs Compliant: Yes
***nell
TRANSISTOR, RF, NPN/PNP, 50V, SOT-563-6; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 4.7(Ratio); RF Transistor Case: SOT-563; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); No. of Pins: 6Pins
***ical
Trans Digital BJT NPN/PNP 50V 100mA 500mW 6-Pin SOT-563 T/R
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***emi
Complementary Bipolar Digital Transistor (BRT)
***ark
Brt Transistor, 50V, 47K/10Kohm, Sot-553; Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:- Rohs Compliant: Yes
モデル メーカー 説明 ストック 価格
NSBC114YDXV6T5G
DISTI # NSBC114YDXV6T5G-ND
ON SemiconductorTRANS 2NPN PREBIAS 0.5W SOT563
RoHS: Compliant
Min Qty: 8000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 8000:$0.0977
NSBC114YDXV6T5G
DISTI # NSBC114YDXV6T5G
ON SemiconductorTrans Digital BJT NPN 50V 100mA 6-Pin SOT-563 T/R - Tape and Reel (Alt: NSBC114YDXV6T5G)
RoHS: Compliant
Min Qty: 8000
Container: Reel
Americas - 0
  • 8000:$0.0779
  • 16000:$0.0769
  • 32000:$0.0759
  • 48000:$0.0749
  • 80000:$0.0739
NSBC114YDXV6T5G
DISTI # NSBC114YDXV6T5G
ON SemiconductorTrans Digital BJT NPN 50V 100mA 6-Pin SOT-563 T/R (Alt: NSBC114YDXV6T5G)
RoHS: Compliant
Min Qty: 8000
Container: Tape and Reel
Europe - 0
  • 8000:€0.1519
  • 16000:€0.1179
  • 32000:€0.0959
  • 48000:€0.0809
  • 80000:€0.0759
NSBC114YDXV6T5G
DISTI # 42K2328
ON SemiconductorBRT TRANSISTOR, 50V, 47K/10KOHM, SOT-563,Digital Transistor Polarity:Dual NPN,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:10kohm,Base-Emitter Resistor R2:47kohm RoHS Compliant: Yes0
  • 1:$0.1200
NSBC114YDXV6T5GON Semiconductor 
RoHS: Not Compliant
88000
  • 1000:$0.0900
  • 100:$0.1000
  • 500:$0.1000
  • 1:$0.1100
  • 25:$0.1100
NSBC114YDXV6T1G
DISTI # 863-NSBC114YDXV6T1G
ON SemiconductorBipolar Transistors - Pre-Biased 100mA 50V Dual NPN
RoHS: Compliant
17649
  • 1:$0.3900
  • 10:$0.2510
  • 100:$0.1080
  • 1000:$0.0830
  • 4000:$0.0630
  • 8000:$0.0560
  • 24000:$0.0530
NSBC114YDXV6T5G
DISTI # 863-NSBC114YDXV6T5G
ON SemiconductorBipolar Transistors - Pre-Biased 100mA 50V Dual NPN
RoHS: Compliant
7771
  • 1:$0.3500
  • 10:$0.2660
  • 100:$0.1440
  • 1000:$0.1080
  • 2500:$0.0930
  • 8000:$0.0870
  • 24000:$0.0800
  • 48000:$0.0770
  • 96000:$0.0740
画像 モデル 説明
NSBC114YDXV6T1G

Mfr.#: NSBC114YDXV6T1G

OMO.#: OMO-NSBC114YDXV6T1G

Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
LM4041D12IDBZR

Mfr.#: LM4041D12IDBZR

OMO.#: OMO-LM4041D12IDBZR

Voltage References 1.2-V Precision Mcrpwr Shunt 1% acc
TLV1117-50IDCYR

Mfr.#: TLV1117-50IDCYR

OMO.#: OMO-TLV1117-50IDCYR

LDO Voltage Regulators Fixed LDO Volt Reg
BC847AMTF

Mfr.#: BC847AMTF

OMO.#: OMO-BC847AMTF

Bipolar Transistors - BJT SOT-23 NPN GP AMP
JMK107BJ475KAHT

Mfr.#: JMK107BJ475KAHT

OMO.#: OMO-JMK107BJ475KAHT-TAIYO-YUDEN

Multilayer Ceramic Capacitors MLCC - SMD/SMT AEC-Q200 0603 X5R 6.3V 4.7uF 10%
XFL4020-102MEB

Mfr.#: XFL4020-102MEB

OMO.#: OMO-XFL4020-102MEB-1190

Fixed Inductors 1uH 20% 11A 11.9mOhms AEC-Q200
LM4041D12IDBZR

Mfr.#: LM4041D12IDBZR

OMO.#: OMO-LM4041D12IDBZR-TEXAS-INSTRUMENTS

Voltage References 1.2-V Precision Mcrpwr Shunt 1% acc
TLV1117-50IDCYR

Mfr.#: TLV1117-50IDCYR

OMO.#: OMO-TLV1117-50IDCYR-TEXAS-INSTRUMENTS

LDO Voltage Regulators Fixed LDO Volt Reg
CGB3B1X5R1C225M055AC

Mfr.#: CGB3B1X5R1C225M055AC

OMO.#: OMO-CGB3B1X5R1C225M055AC-TDK

Multilayer Ceramic Capacitors MLCC - SMD/SMT 2.2UF 16V 20% 0603
NSBC114YDXV6T1G

Mfr.#: NSBC114YDXV6T1G

OMO.#: OMO-NSBC114YDXV6T1G-ON-SEMICONDUCTOR

Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
可用性
ストック:
Available
注文中:
1990
数量を入力してください:
NSBC114YDXV6T5Gの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$0.35
$0.35
10
$0.27
$2.66
100
$0.14
$14.40
1000
$0.11
$108.00
2500
$0.09
$232.50
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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