NVMFS5826NLT1G

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SO-FL-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

26 A

Rds On - Drain-Source Resistance:

18 mOhms

Vgs th - Gate-Source Threshold Voltage:

2.5 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

17 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

39 W

Configuration:

Single

Qualification:

AEC-Q101

Packaging:

Reel

Series:

NVMFS5826NL

Transistor Type:

1 N-Channel

Brand:

ON Semiconductor

Forward Transconductance - Min:

8 S

Fall Time:

24 ns

Product Type:

MOSFET

Rise Time:

32 ns

Factory Pack Quantity:

1500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

15 ns

Typical Turn-On Delay Time:

9 ns

Unit Weight:

0.003781 oz

Tags

NVMFS582, NVMFS58, NVMFS5, NVMFS, NVMF, NVM