IXFN60N60

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Chassis Mount

Package / Case:

SOT-227-4

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

60 A

Rds On - Drain-Source Resistance:

75 mOhms

Vgs th - Gate-Source Threshold Voltage:

4.5 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

380 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

700 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

HyperFET

Packaging:

Tube

Height:

12.22 mm

Length:

38.23 mm

Series:

IXFN60N60

Transistor Type:

1 N-Channel

Type:

HiPerFET Power MOSFET

Width:

25.42 mm

Brand:

IXYS

Forward Transconductance - Min:

40 S

Fall Time:

26 ns

Product Type:

MOSFET

Rise Time:

52 ns

Factory Pack Quantity:

10

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

110 ns

Typical Turn-On Delay Time:

43 ns

Unit Weight:

1.058219 oz

Tags

IXFN60, IXFN6, IXFN, IXF