STB21NM50N-1

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-262-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

500 V

Id - Continuous Drain Current:

18 A

Rds On - Drain-Source Resistance:

190 mOhms

Vgs - Gate-Source Voltage:

25 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

140 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

8.95 mm

Length:

10 mm

Series:

STF21NM50N

Transistor Type:

1 N-Channel

Width:

4.4 mm

Brand:

STMicroelectronics

Forward Transconductance - Min:

12 S

Fall Time:

30 ns

Product Type:

MOSFET

Rise Time:

18 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

90 ns

Typical Turn-On Delay Time:

22 ns

Unit Weight:

0.050717 oz

Tags

STB21NM, STB21N, STB21, STB2, STB