ZTX657STZ

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

Through Hole

Package / Case:

TO-92-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

300 V

Collector- Base Voltage VCBO:

300 V

Emitter- Base Voltage VEBO:

5 V

Maximum DC Collector Current:

0.5 A

Gain Bandwidth Product fT:

30 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Series:

ZTX657

DC Current Gain hFE Max:

50 at 100 mA, 5 V

Height:

4.01 mm

Length:

4.77 mm

Packaging:

Bulk

Width:

2.41 mm

Brand:

Diodes Incorporated

Continuous Collector Current:

0.5 A

DC Collector/Base Gain hfe Min:

50 at 100 mA, 5 V, 40 at 10 mA, 5 V

Pd - Power Dissipation:

1 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

2000

Subcategory:

Transistors

Unit Weight:

0.016000 oz

Tags

ZTX657ST, ZTX657S, ZTX657, ZTX65, ZTX6, ZTX