We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| FQB7N65CTM DISTI # FQB7N65CTMTR-ND | ON Semiconductor | MOSFET N-CH 650V 7A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR) | Limited Supply - Call | |
| FQB7N65CTM DISTI # FQB7N65CTMCT-ND | ON Semiconductor | MOSFET N-CH 650V 7A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| FQB7N65CTM DISTI # FQB7N65CTMDKR-ND | ON Semiconductor | MOSFET N-CH 650V 7A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| FQB7N65CTM DISTI # FQB7N65CTM | ON Semiconductor | Trans MOSFET N-CH 650V 7A 3-Pin(2+Tab) D2PAK T/R - Bulk (Alt: FQB7N65CTM) RoHS: Compliant Min Qty: 232 Container: Bulk | Americas - 0 |
|
| FQB7N65CTM DISTI # 512-FQB7N65CTM | ON Semiconductor | MOSFET 650V 7A NCH MOSFET RoHS: Compliant | 0 | |
| FQB7N65CTM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 7A I(D), 650V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 7686 |
|
| FQB7N65CTM DISTI # 1495282 | ON Semiconductor | RoHS: Compliant | 0 |
|
| Image | Part # | Description |
|---|---|---|
|
Mfr.#: FQB7N30TM OMO.#: OMO-FQB7N30TM |
MOSFET 300V N-Channel QFET |
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Mfr.#: FQB13N50C OMO.#: OMO-FQB13N50C-1190 |
New and Original |
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Mfr.#: FQB24N08TM |
MOSFET N-CH 80V 24A D2PAK |
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Mfr.#: FQB2532 OMO.#: OMO-FQB2532-1190 |
New and Original |
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Mfr.#: FQB2NA90TMFSC OMO.#: OMO-FQB2NA90TMFSC-1190 |
New and Original |
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Mfr.#: FQB34N20TM OMO.#: OMO-FQB34N20TM-1190 |
Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: FQB5N50CF OMO.#: OMO-FQB5N50CF-1190 |
New and Original |
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Mfr.#: FQB7N30 OMO.#: OMO-FQB7N30-1190 |
New and Original |
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Mfr.#: FQB7N20LTM |
MOSFET N-CH 200V 6.5A D2PAK |
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Mfr.#: FQB7N20TM |
MOSFET N-CH 200V 6.6A D2PAK |