Jan2N3485A/TR

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

Bipolar Transistors - BJT

RoHS:

N

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-46-3

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

60 V

Collector- Base Voltage VCBO:

60 V

Emitter- Base Voltage VEBO:

5 V

Collector-Emitter Saturation Voltage:

1.6 V

Maximum DC Collector Current:

600 mA

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 200 C

DC Current Gain hFE Max:

120 at 150 mA, 10 V

Brand:

Microchip / Microsemi

DC Collector/Base Gain hfe Min:

40 at 100 uA, 10 V

Pd - Power Dissipation:

400 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

1

Subcategory:

Transistors

Tags

Jan2N348, JAN2N34, Jan2N3, Jan2N, Jan2, JAN