RCX200N20

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220FP-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

200 V

Id - Continuous Drain Current:

20 A

Rds On - Drain-Source Resistance:

310 mOhms

Vgs th - Gate-Source Threshold Voltage:

3 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

40 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2.23 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

4.8 mm

Length:

15.4 mm

Product:

MOSFET

Series:

RCX200N20

Transistor Type:

1 N-channel

Type:

Power MOSFET

Width:

10.3 mm

Brand:

ROHM Semiconductor

Fall Time:

45 ns

Product Type:

MOSFET

Rise Time:

100 ns

Factory Pack Quantity:

500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

60 ns

Typical Turn-On Delay Time:

35 ns

Part # Aliases:

RCX200N20

Unit Weight:

0.211644 oz

Tags

RCX200, RCX20, RCX2, RCX