IPB60R250CP

IPB60R250CP
Mfr. #:
IPB60R250CP
メーカー:
Rochester Electronics, LLC
説明:
Darlington Transistors MOSFET N-Ch 600V 12A D2PAK-2 CoolMOS CP
ライフサイクル:
メーカー新製品
データシート:
IPB60R250CP データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー
インフィニオン
製品カテゴリ
FET-シングル
シリーズ
CoolMOS CP
包装
リール
パーツエイリアス
IPB60R250CPATMA1 IPB60R250CPXT SP000358140
単位重量
0.139332 oz
取り付けスタイル
SMD / SMT
商標名
CoolMOS
パッケージ-ケース
TO-252-3
テクノロジー
Si
チャネル数
1 Channel
構成
独身
トランジスタタイプ
1 N-Channel
Pd-電力損失
104 W
最高作動温度
+ 150 C
最低作動温度
- 55 C
立ち下がり時間
12 ns
立ち上がり時間
17 ns
Vgs-Gate-Source-Voltage
20 V
Id-連続-ドレイン-電流
12 A
Vds-ドレイン-ソース-ブレークダウン-電圧
600 V
Rds-On-Drain-Source-Resistance
250 mOhms
トランジスタ-極性
Nチャネル
典型的なターンオフ遅延時間
110 ns
典型的なターンオン遅延時間
40 ns
チャネルモード
強化
Tags
IPB60R2, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK T/R
***et
Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) TO-263
***et Europe
Trans MOSFET N-CH 600V 12A 3-Pin TO-263 T/R
***o-Tech
MOSFET N-Channel 600V 12A CoolMOS3 TO263
***i-Key
MOSFET N-CH 650V 12A TO263-3
***ark
MOSFET, N, TO-263; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Typ Voltage Vds:650V; Current, Id Cont:12A; On State Resistance:0.25ohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:3V; Case Style:TO-263; ;RoHS Compliant: Yes
***nell
MOSFET, N, TO-263; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:650V; Current, Id Cont:12A; On State Resistance:0.25ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-263; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; SVHC:Cobalt dichloride
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
モデル メーカー 説明 ストック 価格
IPB60R250CPATMA1
DISTI # IPB60R250CPATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 650V 12A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    IPB60R250CP
    DISTI # IPB60R250CP
    Infineon Technologies AGTrans MOSFET N-CH 600V 12A 3-Pin TO-263 T/R (Alt: IPB60R250CP)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel
    Asia - 1000
      IPB60R250CP
      DISTI # SP000358140
      Infineon Technologies AGTrans MOSFET N-CH 600V 12A 3-Pin TO-263 T/R (Alt: SP000358140)
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape and Reel
      Europe - 0
      • 1000:€1.9900
      • 2000:€1.4900
      • 4000:€1.3900
      • 6000:€1.3900
      • 10000:€1.2900
      IPB60R250CPInfineon Technologies AGPower Field-Effect Transistor, 12A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant
      44770
      • 1000:$1.6800
      • 500:$1.7700
      • 100:$1.8400
      • 25:$1.9200
      • 1:$2.0600
      IPB60R250CPATMA1Infineon Technologies AGPower Field-Effect Transistor, 12A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant
      35000
      • 1000:$2.1800
      • 500:$2.2900
      • 100:$2.3900
      • 25:$2.4900
      • 1:$2.6800
      IPB60R250CP
      DISTI # 726-IPB60R250CP
      Infineon Technologies AGMOSFET N-Ch 600V 12A D2PAK-2 CoolMOS CP
      RoHS: Compliant
      449
      • 1:$3.3200
      • 10:$2.6700
      • 100:$2.4300
      • 250:$2.1900
      • 500:$1.9700
      • 1000:$1.6500
      • 2000:$1.5700
      • 5000:$1.4400
      IPB60R250CPATMA1
      DISTI # 726-IPB60R250CPATMA1
      Infineon Technologies AGMOSFET N-Ch 600V 12A D2PAK-2 CoolMOS CP
      RoHS: Compliant
      0
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        ブランドニューオリジナル
        可用性
        ストック:
        Available
        注文中:
        1000
        数量を入力してください:
        IPB60R250CPの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
        参考価格(USD)
        単価
        小計金額
        1
        $2.16
        $2.16
        10
        $2.05
        $20.52
        100
        $1.94
        $194.40
        500
        $1.84
        $918.00
        1000
        $1.73
        $1 728.00
        2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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