SI5908DC-T1-GE3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

ChipFET-8

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

5.9 A

Rds On - Drain-Source Resistance:

40 mOhms

Vgs th - Gate-Source Threshold Voltage:

400 mV

Vgs - Gate-Source Voltage:

8 V

Qg - Gate Charge:

7.5 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2.1 W

Configuration:

Dual

Channel Mode:

Enhancement

Tradename:

TrenchFET

Packaging:

Reel

Series:

SI5

Transistor Type:

2 N-Channel

Brand:

Vishay / Siliconix

Forward Transconductance - Min:

22 S

Fall Time:

12 ns

Product Type:

MOSFET

Rise Time:

36 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

30 ns

Typical Turn-On Delay Time:

20 ns

Part # Aliases:

SI5904DC-T1-GE3 SI5904DWF

Unit Weight:

0.002998 oz

Tags

SI5908D, SI5908, SI590, SI59, SI5