DMN62D0UDW-7

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-363-6

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

350 mA

Rds On - Drain-Source Resistance:

2 Ohms

Vgs th - Gate-Source Threshold Voltage:

500 mV

Vgs - Gate-Source Voltage:

4.5 V

Qg - Gate Charge:

0.5 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

410 mW

Configuration:

Dual

Channel Mode:

Enhancement

Packaging:

Reel

Series:

DMN62D0UDW

Transistor Type:

2 N-Channel

Brand:

Diodes Incorporated

Forward Transconductance - Min:

1.8 S

Fall Time:

12.5 ns

Product Type:

MOSFET

Rise Time:

2.5 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

22.6 ns

Typical Turn-On Delay Time:

2.4 ns

Unit Weight:

0.000265 oz

Tags

DMN62D0U, DMN62D0, DMN62, DMN6, DMN