BSD235C L6327

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-363-6

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel, P-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

950 mA

Rds On - Drain-Source Resistance:

350 mOhms, 1.2 Ohms

Vgs - Gate-Source Voltage:

12 V

Qg - Gate Charge:

- 400 pC, 340 pC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

500 mW (1/2 W)

Configuration:

Dual

Channel Mode:

Enhancement

Packaging:

Reel

Height:

0.9 mm

Length:

2 mm

Product:

MOSFET Small Signal

Series:

BSD235

Transistor Type:

1 N-Channel, 1 P-Channel

Width:

1.25 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

2 S, 0.7 S

Fall Time:

1.2 ns, 3.2 ns

Product Type:

MOSFET

Rise Time:

3.6 nS, 5 nS

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

4.5 nS, 5.1 nS

Typical Turn-On Delay Time:

3.8 nS, 3.8 nS

Part # Aliases:

BSD235CL6327HTSA1 SP000442466

Unit Weight:

0.000265 oz

Tags

BSD235C, BSD23, BSD2, BSD