DMN1008UFDF-7

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

U-DFN2020-6

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

12 V

Id - Continuous Drain Current:

12.2 A

Rds On - Drain-Source Resistance:

6.6 mOhms

Vgs th - Gate-Source Threshold Voltage:

300 mV

Vgs - Gate-Source Voltage:

4.5 V

Qg - Gate Charge:

13.6 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

1.7 W

Configuration:

Single

Channel Mode:

Enhancement

Brand:

Diodes Incorporated

Fall Time:

7.5 ns

Product Type:

MOSFET

Rise Time:

6.6 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

17.5 ns

Typical Turn-On Delay Time:

3.5 ns

Tags

DMN100, DMN10, DMN1, DMN