DMP45H4D9HJ3

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-251-3

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

450 V

Id - Continuous Drain Current:

4.6 A

Rds On - Drain-Source Resistance:

3.1 Ohms

Vgs th - Gate-Source Threshold Voltage:

5 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

13.7 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

104 W

Configuration:

Single

Channel Mode:

Enhancement

Transistor Type:

1 P-Channel

Brand:

Diodes Incorporated

Fall Time:

31 ns

Product Type:

MOSFET

Rise Time:

40 ns

Factory Pack Quantity:

75

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

32 ns

Typical Turn-On Delay Time:

19 ns

Unit Weight:

0.011640 oz

Tags

DMP45, DMP4, DMP