S25FL512SAGBHM210

Mfr. #:: S25FL512SAGBHM210
メーカー:: Cypress Semiconductor
説明:: NOR Flash IC 512 Mb FLASH MEMORY
ライフサイクル:: メーカー新製品
データシート:: S25FL512SAGBHM210 データシート
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詳しくは:: S25FL512SAGBHM210 詳しくは S25FL512SAGBHM210 Product Details

製品属性
属性値

メーカー：: サイプレスセミコンダクタ

製品カテゴリ：: NORフラッシュ

JBoss：: Y

シリーズ：: S25FL512S

資格：: AEC-Q100

包装：: トレイ

メモリタイプ：: または

ブランド：: サイプレスセミコンダクタ

感湿性：: はい

製品タイプ：: NORフラッシュ

ファクトリーパックの数量：: 338

サブカテゴリ：: メモリとデータストレージ

商標名：: MirrorBit

Tags: S25FL512SAGBH, S25FL512SAGB, S25FL512SAG, S25FL512SA, S25FL512S, S25FL5, S25FL, S25F, S25

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

S25FL512SAGBHM210 説明

***i-Key: IC 512 MB FLASH MEMORY

S25FL512SAGBHM210 詳しくは

S25FL512S FL-S NOR Flash Memory Devices: Cypress S25FL512S FL-S NOR Flash Memory Devices are VIO VCC 2.7V to 3.6V flash non-volatile memory devices. These devices use 65nm MirrorBit technology. Designed using Eclipse™ architecture with a 512-byte page programming buffer. The 512-Mb S25FL512S FL-S NOR allows users to program up to 256 words (512 bytes) in one operation. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via an SPI and supports traditional SPI single bit serial input and output. Optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. The S25FL512S FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO that transfer address. The S25FL512S FL-S transfer address and read data on both edges of the clock. By using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the read transfer rate instruction can match traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL512S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. The S25FL512S FL-S NOR is ideal for code shadowing, XIP, and data storage.

Market price

モデル	メーカー	説明	ストック	価格
S25FL512SAGBHM210 DISTI # V36:1790_18759705	Cypress Semiconductor	IC 512 Mb FLASH MEMORY	0	338000:$7.4170 169000:$7.4210 33800:$7.8350 3380:$8.6290 338:$8.7650
S25FL512SAGBHM210 DISTI # S25FL512SAGBHM210-ND	Cypress Semiconductor	IC 512 MB FLASH MEMORY RoHS: Compliant Min Qty: 338 Container: Tray	Temporarily Out of Stock	338:$8.7651
S25FL512SAGBHM210 DISTI # 47AC6132	Cypress Semiconductor	S25FL512SAGBHM210	0	500:$7.9600 250:$8.2000 100:$9.3700 50:$9.9200 25:$11.0200 10:$11.3300 1:$12.1200
S25FL512SAGBHM210 DISTI # 727-S25FL512SAGBHM21	Cypress Semiconductor	NOR Flash IC 512 Mb FLASH MEMORY RoHS: Compliant	0	1:$13.4700 10:$12.2400 25:$11.3200 50:$10.4000 250:$9.4900 500:$8.8700

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