RJH60T04DPQ-A1#T0

RJH60T04DPQ-A1#T0
Mfr. #:
RJH60T04DPQ-A1#T0
Manufacturer:
Renesas Electronics
Description:
IGBT Transistors IGBT 650V TO247A
Lifecycle:
New from this manufacturer.
Datasheet:
RJH60T04DPQ-A1#T0 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
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HTML Datasheet:
RJH60T04DPQ-A1#T0 DatasheetRJH60T04DPQ-A1#T0 Datasheet (P4-P6)RJH60T04DPQ-A1#T0 Datasheet (P7-P8)
ECAD Model:
More Information:
RJH60T04DPQ-A1#T0 more Information
Product Attribute
Attribute Value
Manufacturer:
Renesas Electronics
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-247A-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
600 V
Collector-Emitter Saturation Voltage:
1.5 V
Maximum Gate Emitter Voltage:
30 V
Continuous Collector Current at 25 C:
60 A
Pd - Power Dissipation:
208.3 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Packaging:
Tube
Continuous Collector Current Ic Max:
60 A
Brand:
Renesas Electronics
Gate-Emitter Leakage Current:
+/- 1 uA
Product Type:
IGBT Transistors
Factory Pack Quantity:
1
Subcategory:
IGBTs
Unit Weight:
0.211644 oz
Tags
RJH60T, RJH60, RJH6, RJH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 60A 208300mW Tube
***i-Key
IGBT TRENCH 600V 60A TO247A
***Components
IGBT 600V 60A TO247A
***et
IGBT 650V TO247A
IGBT Transistors
Renesas IGBT Transistors incorporate Trench gate, thin wafer technology, and feature built-in fast recovery diode in one package. These transistors include single configuration and incorporate through hole mounting style. The IGBT transistor's collector to emitter voltage ranges from 600V to 650V. Typical applications include current resonance circuit, inverters, induction heating, microwave oven, and power factor correction circuit.Learn More
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Availability
Stock:
45
On Order:
2028
Enter Quantity:
Current price of RJH60T04DPQ-A1#T0 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$5.43
$5.43
10
$4.85
$48.50
25
$4.36
$109.00
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