2N5686G

2N5686G
Mfr. #:
2N5686G
メーカー:
ON Semiconductor
説明:
Bipolar Transistors - BJT 50A 80V 300W NPN
ライフサイクル:
メーカー新製品
データシート:
2N5686G データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
2N5686G Datasheet2N5686G Datasheet (P4-P5)
ECAD Model:
製品属性
属性値
メーカー:
オン・セミコンダクター
製品カテゴリ:
バイポーラトランジスタ-BJT
JBoss:
Y
取り付けスタイル:
スルーホール
パッケージ/ケース:
TO-204-2
トランジスタの極性:
NPN
構成:
独身
コレクター-エミッター電圧VCEOMax:
80 V
コレクター-ベース電圧VCBO:
80 V
エミッタ-ベース電圧VEBO:
5 V
コレクター-エミッター飽和電圧:
1 V
最大DCコレクタ電流:
50 A
ゲイン帯域幅積fT:
2 MHz
最低動作温度:
- 65 C
最高作動温度:
+ 150 C
シリーズ:
2N5686
高さ:
8.51 mm
長さ:
38.86 mm
包装:
トレイ
幅:
26.67 mm
ブランド:
オン・セミコンダクター
連続コレクタ電流:
50 A
DCコレクター/ベースゲインhfe最小:
15
Pd-消費電力:
300 W
製品タイプ:
BJT-バイポーラトランジスタ
ファクトリーパックの数量:
100
サブカテゴリ:
トランジスタ
単位重量:
0.488015 oz
Tags
2N568, 2N56, 2N5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Transistor, Bipolar, Si, NPN, High Current, Power, VCEO 80VDC, IC 50A, PD 300mW, hFE 5
***emi
50 A, 80 V NPN Bipolar Power Transistor
***ical
Trans GP BJT NPN 80V 50A 300000mW 3-Pin(2+Tab) TO-204 Tray
***r Electronics
Power Bipolar Transistor, 50A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin
***ure Electronics
2N Series 80 V 50 A High-Current Complementary Silicon Power Transistor - TO-204
***el Electronic
ON SEMICONDUCTOR - 2N5686G - Transistor Bipolar (BJT) Individual, Propósito General, NPN, 80 V, 2 MHz, 300 mW, 50 A, 2 hFE
***nell
TRANS, BIPOL, NPN, 80V, TO-204AA; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 300W; DC Collector Current: 50A; DC Current Gain hFE: 15hFE; Transistor
***roFlash
Transistor, Bipolar, Si, NPN, High Current, Power, VCEO 80VDC, IC 60A, PD 300W, hFE 5
***emi
60 A, 80 V NPN Bipolar Power Transistor
***ical
Trans GP BJT NPN 80V 60A 300000mW 3-Pin(2+Tab) TO-204 Tray
***S.I.T. Europe - USA - Asia
Power Bipolar Transistor, 60A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
***enic
80V 300W 60A NPN TO-3 Bipolar Transistors - BJT ROHS
***ark
BIPOLAR TRANSISTOR, NPN, 80V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:60A; Power Dissipation:300W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Transition Frequency:- RoHS Compliant: Yes
***nell
TRANSISTOR; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: -; Power Dissipation Pd: 300W; DC Collector Current: 1mA; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-204AA; No. of Pins: 2Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 2.5V; Current Gain Hfe Max: 100; Current Ib: 1A; Current Ic Continuous a Max: 60A; Current Ic NPN Device: 1A; DC Current Gain Hfe Min: 15; DC Current Gain Max (hfe): 100; Junction Temperature Tj Max: +200°C; Junction Temperature Tj Min: -65°C; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +200°C; Termination Type: Through Hole; Voltage Vcbo: 80V
***ical
Trans GP BJT NPN 60V 30A 200000mW 3-Pin(2+Tab) TO-3 Tray
***r Electronics
Power Bipolar Transistor, 30A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
***ure Electronics
2N Series 60 V 30 A Screw Mount High-Power NPN Silicon Transistor - TO-204AA
***emi
High Power NPN Bipolar Power Transistor
***ark
Bipolar Transistor, Npn, 60V To-204; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:60V; Dc Collector Current:30A; Power Dissipation Pd:200W; Transistor Mounting:through Hole; No. Of Pins:2Pins; Dc Current Gain Hfe:5Hfe Rohs Compliant: Yes
***(Formerly Allied Electronics)
Transistor, Bipolar,Si,NPN,High Power,VCEO 80VDC,IC 25A,PD 200W,TO-204AA (TO-3)
***emi
25 A, 80 V NPN Bipolar Power Transistor
***ical
Trans GP BJT NPN 80V 25A 200000mW 3-Pin(2+Tab) TO-3 Tray
***r Electronics
Power Bipolar Transistor, 25A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
***ure Electronics
2N Series 80 V 25 A NPN Complementary Silicon High-Power Transistor - TO-204AA
***ment14 APAC
Transistor, NPN, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:4MHz; Power Dissipation Pd:200W; DC
***nell
TRANSISTOR, NPN, TO-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 4MHz; Power Dissipation Pd: 200W; DC Collector Current: 25A; DC Current Gain hFE: 4hFE; Transistor Case Style: TO-204AA; No. of Pins: 2Pins; Operating Temperature Max: 200°C; Product Range: 2NXXXX Series; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018); Av Current Ic: 25A; Collector Emitter Saturation Voltage Vce(on): 1V; Continuous Collector Current Ic Max: 25A; Current Ic Continuous a Max: 25A; Current Ic hFE: 10A; Device Marking: 2N5886G; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 4MHz; Gain Bandwidth ft Typ: 4MHz; Hfe Min: 20; No. of Transistors: 1; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +200°C; Power Dissipation Ptot Max: 200W; Voltage Vcbo: 80V
モデル メーカー 説明 ストック 価格
2N5686G
DISTI # V99:2348_07290247
ON SemiconductorTrans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray
RoHS: Compliant
100
  • 1000:$7.2220
  • 500:$8.0230
  • 200:$9.1660
  • 100:$9.5820
2N5686G
DISTI # V36:1790_07290247
ON SemiconductorTrans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray
RoHS: Compliant
85
  • 1000:$7.2220
  • 500:$8.0230
  • 200:$9.1660
  • 100:$9.5820
2N5686G
DISTI # 2N5686GOS-ND
ON SemiconductorTRANS NPN 80V 50A TO3
RoHS: Compliant
Min Qty: 1
Container: Tray
304In Stock
  • 500:$9.5369
  • 100:$10.7208
  • 10:$12.6940
  • 1:$13.8100
2N5686G
DISTI # 31062962
ON SemiconductorTrans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray
RoHS: Compliant
100
  • 1:$9.5820
2N5686G
DISTI # 30223364
ON SemiconductorTrans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray
RoHS: Compliant
85
  • 85:$9.5820
2N5686G
DISTI # 2N5686G
ON SemiconductorTrans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray - Trays (Alt: 2N5686G)
RoHS: Compliant
Min Qty: 100
Container: Tray
Americas - 85
  • 100:$8.0900
  • 200:$8.0900
  • 400:$7.9900
  • 600:$7.8900
  • 1000:$7.6900
2N5686G
DISTI # 2N5686G
ON SemiconductorTrans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray (Alt: 2N5686G)
RoHS: Compliant
Min Qty: 1
Container: Tray
Europe - 0
  • 1:€10.7755
  • 10:€9.9130
  • 100:€8.3720
2N5686G
DISTI # 26K5299
ON SemiconductorTrans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray - Bulk (Alt: 26K5299)
RoHS: Compliant
Min Qty: 1
Container: Bulk
Americas - 0
  • 1:$13.1500
  • 10:$12.1000
  • 25:$11.5900
  • 50:$10.9100
  • 100:$10.2200
  • 250:$9.7100
  • 500:$9.0900
2N5686G
DISTI # 26K5299
ON SemiconductorBIPOLAR TRANSISTOR, NPN, 80V,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:80V,Transition Frequency ft:2MHz,Power Dissipation Pd:300mW,DC Collector Current:50A,DC Current Gain hFE:2hFE,No. of Pins:2Pins,MSL:- , RoHS Compliant: Yes172
  • 1:$11.1800
  • 10:$10.2900
  • 25:$9.8600
  • 50:$9.2800
  • 100:$8.6900
  • 250:$8.2600
  • 500:$7.7300
2N5686G.
DISTI # 30AC3786
ON SemiconductorBIP T03 NPN 50A 80V , ROHS COMPLIANT: YES85
  • 1:$13.4100
  • 10:$12.3400
  • 25:$11.8200
  • 50:$10.9100
  • 100:$10.2200
  • 250:$9.7100
  • 500:$9.0900
2N5686G
DISTI # 70099763
ON SemiconductorTransistor,Bipolar,Si,NPN,High Current,Power,VCEO 80VDC,IC 50A,PD 300mW,hFE 5
RoHS: Compliant
0
  • 1:$13.0900
  • 100:$12.4400
  • 250:$11.8100
2N5686GON Semiconductor 
RoHS: Not Compliant
3067
  • 1000:$10.2400
  • 500:$10.7700
  • 100:$11.2200
  • 25:$11.7000
  • 1:$12.6000
2N5686G
DISTI # 863-2N5686G
ON SemiconductorBipolar Transistors - BJT 50A 80V 300W NPN
RoHS: Compliant
187
  • 1:$13.1500
  • 10:$12.1000
  • 20:$11.5900
  • 100:$10.2200
  • 200:$9.7100
  • 500:$9.0900
2N5686
DISTI # 863-2N5686
ON SemiconductorBipolar Transistors - BJT 50A 80V 300W NPN
RoHS: Not compliant
0
    2N5686G
    DISTI # 8624893
    ON SemiconductorBJT NPN 50A 80V TO-204-2, EA228
    • 1:£9.7000
    2N5686G
    DISTI # 2630288
    ON SemiconductorTRANS, BIPOL, NPN, 80V, TO-204AA
    RoHS: Compliant
    253
    • 1:$20.8200
    • 10:$19.1500
    • 20:$18.3500
    • 100:$16.1700
    • 200:$15.3700
    • 500:$14.3900
    • 1000:$13.2000
    2N5686G
    DISTI # 2630288
    ON SemiconductorTRANS, BIPOL, NPN, 80V, TO-204AA
    RoHS: Compliant
    262
    • 1:£10.5600
    • 5:£10.0500
    • 10:£8.8600
    • 50:£8.1400
    • 100:£7.4100
    画像 モデル 説明
    2N5684G

    Mfr.#: 2N5684G

    OMO.#: OMO-2N5684G

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    OMO.#: OMO-2TL1-3D

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    Mfr.#: W31-X2M1G-10

    OMO.#: OMO-W31-X2M1G-10

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    1N4750A

    Mfr.#: 1N4750A

    OMO.#: OMO-1N4750A-ON-SEMICONDUCTOR

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    LF347N

    Mfr.#: LF347N

    OMO.#: OMO-LF347N-TEXAS-INSTRUMENTS

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    可用性
    ストック:
    218
    注文中:
    2201
    数量を入力してください:
    2N5686Gの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $14.99
    $14.99
    10
    $13.79
    $137.90
    20
    $13.21
    $264.20
    100
    $11.64
    $1 164.00
    200
    $11.07
    $2 214.00
    500
    $10.36
    $5 180.00
    1000
    $9.50
    $9 500.00
    2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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