FDMA430NZ

FDMA430NZ
Mfr. #:
FDMA430NZ
メーカー:
ON Semiconductor / Fairchild
説明:
MOSFET 2.5V SINGLE NCH SPECIFIED POWER
ライフサイクル:
メーカー新製品
データシート:
FDMA430NZ データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
FDMA430NZ 詳しくは
製品属性
属性値
メーカー:
オン・セミコンダクター
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
MicroFET-6
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
30 V
Id-連続ドレイン電流:
5 A
Rds On-ドレイン-ソース抵抗:
40 mOhms
Vgs-ゲート-ソース間電圧:
12 V
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
900 mW
構成:
独身
チャネルモード:
強化
商標名:
PowerTrench
包装:
リール
高さ:
0.75 mm
長さ:
2 mm
製品:
MOSFET小信号
シリーズ:
FDMA430NZ
トランジスタタイプ:
1 N-Channel
幅:
2 mm
ブランド:
オン・セミコンダクター/フェアチャイルド
立ち下がり時間:
7.1 ns
製品タイプ:
MOSFET
立ち上がり時間:
7.1 ns
ファクトリーパックの数量:
3000
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
18.1 ns
典型的なターンオン遅延時間:
8.3 ns
単位重量:
0.001058 oz
Tags
FDMA4, FDMA, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E***v
    E***v
    RU

    Once check. The package corresponds. The workmanship is low, but for this money it is logical that there will be no other.

    2019-04-10
    A***s
    A***s
    UA

    Excellent --- spark sooo strong, shipping and sending fast --- recommend.

    2019-03-23
***emi
N-Channel PowerTrench® MOSFET, 2.5V Specified, 30V, 5.0A, 40mΩ
***rchild Semiconductor
This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe.
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):23.6mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:810mV; Power Dissipation Pd:900mW; Transistor Case Style:MicroFET; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:5A; Package / Case:MicroFET; Power Dissipation Pd:900mW; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:810mV; Voltage Vgs Rds on Measurement:4.5V
***el Electronic
DC DC Converters 1 (Unlimited) 2 8-SIP Module, 7 Leads Through Hole Isolated Module ITE (Commercial), Medical ECONOLINE RSO (1W) -40°C ~ 85°C 0.86 L x 0.36 W x 0.44 H (21.8mm x 9.2mm x 11.1mm) CONV DC/DC 1W DL +/-12V OUT SIP8
***Yang
Transistor: N-MOSFET, unipolar, 30V, 5A, 29ohm, 1.3W, -55+150 deg.C, SMD, SOT23
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
***ure Electronics
Single N-Channel 30 V 37 mOhm 6.8 nC HEXFET® Power Mosfet - SOT-23
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W
***et
Trans MOSFET N-CH 30V 5A 3-Pin SOT-23 T/R
***ark
N CH MOSFET, 30V, 5A, 3-SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV; No. of Pins:3 ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
***(Formerly Allied Electronics)
IRF7313PBF Dual N-channel MOSFET Transistor; 6.5 A; 30 V; 8-Pin SOIC
***eco
Transistor MOSFET N Channel 30 Volt 6.5 .6 Amp 8 Pin SOIC Tape and Reel
***et
Transistor MOSFET Array Dual N-CH 30V 6.5A 8-Pin SOIC Tube
***ure Electronics
Dual N-Channel 30 V 0.046 Ohm 33 nC HEXFET® Power Mosfet - SOIC-8
***nell
MOSFET, DUAL, NN, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.029ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Di
***(Formerly Allied Electronics)
SI4532CDY-T1-GE3 Dual N/P-channel MOSFET Transistor; 4.3 A; 6 A; 30V; 8-Pin SOIC
***et
Trans MOSFET N/P-CH 30V 4.9A/3.4A 8-Pin SOIC N T/R
***roFlash
Small Signal Field-Effect Transistor, 6A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***emi
N-Channel Enhancement Mode Field Effect Transistor 30V, 2.5V Specified, 6.3A, 45mΩ
***ical
Trans MOSFET N-CH 30V 6.3A 4-Pin (3+Tab) SOT-223 T/R
***Yang
Trans MOSFET N-CH 30V 6.3A 4-Pin(3+Tab) SOT-223 T/R - Product that comes on tape, but is not reeled
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:6.3A; On Resistance, Rds(on):0.045ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SOT-223 ;RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, and provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.
***ure Electronics
ZXMN3F30 Series 30 V 0.047 Ohm N-Channel Enhancement Mode MOSFET - SOT-23
***et
Trans MOSFET N-CH 30V 4.6A 3-Pin SOT-23 T/R
***ment14 APAC
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:4.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.6A; On State Resistance @ Vgs = 4.5V:65mohm; On State resistance @ Vgs = 10V:47mohm; Package / Case:SOT-23; Power Dissipation Pd:1.4W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
モデル メーカー 説明 ストック 価格
FDMA430NZ
DISTI # V72:2272_06337807
ON Semiconductor30V 5.0A 40 O NCH SP605
  • 500:$0.2420
  • 250:$0.2688
  • 100:$0.2988
  • 25:$0.4147
  • 10:$0.5068
  • 1:$0.6086
FDMA430NZ
DISTI # V36:1790_06337807
ON Semiconductor30V 5.0A 40 O NCH SP0
  • 3000:$0.1880
FDMA430NZ
DISTI # FDMA430NZCT-ND
ON SemiconductorMOSFET N-CH 30V 5A MICROFET
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
45696In Stock
  • 1000:$0.2793
  • 500:$0.3491
  • 100:$0.4416
  • 10:$0.5760
  • 1:$0.6500
FDMA430NZ
DISTI # FDMA430NZDKR-ND
ON SemiconductorMOSFET N-CH 30V 5A MICROFET
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
45696In Stock
  • 1000:$0.2793
  • 500:$0.3491
  • 100:$0.4416
  • 10:$0.5760
  • 1:$0.6500
FDMA430NZ
DISTI # FDMA430NZTR-ND
ON SemiconductorMOSFET N-CH 30V 5A MICROFET
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
45000In Stock
  • 30000:$0.2147
  • 15000:$0.2203
  • 6000:$0.2288
  • 3000:$0.2457
FDMA430NZ
DISTI # 29708299
ON Semiconductor30V 5.0A 40 O NCH SP3000
  • 3000:$0.2152
FDMA430NZ
DISTI # 27517246
ON Semiconductor30V 5.0A 40 O NCH SP605
  • 31:$0.6086
FDMA430NZ
DISTI # FDMA430NZ
ON SemiconductorTrans MOSFET N-CH 30V 5A 6-Pin MLP EP T/R - Tape and Reel (Alt: FDMA430NZ)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 3000
  • 30000:$0.1989
  • 18000:$0.2039
  • 12000:$0.2089
  • 6000:$0.2149
  • 3000:$0.2209
FDMA430NZ
DISTI # FDMA430NZ
ON SemiconductorTrans MOSFET N-CH 30V 5A 6-Pin MLP EP T/R (Alt: FDMA430NZ)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€0.1999
  • 18000:€0.2149
  • 12000:€0.2329
  • 6000:€0.2549
  • 3000:€0.3109
FDMA430NZ
DISTI # FDMA430NZ
ON SemiconductorTrans MOSFET N-CH 30V 5A 6-Pin MLP EP T/R (Alt: FDMA430NZ)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
  • 150000:$0.2646
  • 75000:$0.2690
  • 30000:$0.2783
  • 15000:$0.2882
  • 9000:$0.2989
  • 6000:$0.3104
  • 3000:$0.3228
FDMA430NZ
DISTI # 86K1356
ON SemiconductorN CHANNEL MOSFET, 30V, 5A, MICROFET 2X2,Transistor Polarity:N Channel,Continuous Drain Current Id:5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0236ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:810mV RoHS Compliant: Yes0
  • 1000:$0.2710
  • 500:$0.2930
  • 250:$0.3140
  • 100:$0.3360
  • 50:$0.4250
  • 25:$0.5130
  • 1:$0.6160
FDMA430NZ
DISTI # 79R1468
ON SemiconductorTRANSISTOR, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0236ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:810mV,No. of Pins:6Pins RoHS Compliant: Yes0
  • 1:$0.2310
  • 3000:$0.2310
FDMA430NZ
DISTI # 512-FDMA430NZ
ON SemiconductorMOSFET 2.5V SINGLE NCH SPECIFIED POWER
RoHS: Compliant
7748
  • 1:$0.5600
  • 10:$0.4650
  • 100:$0.3000
  • 1000:$0.2400
  • 3000:$0.2030
FDMA430NZFairchild Semiconductor Corporation5 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET195
    FDMA430NZFairchild Semiconductor Corporation 4328
      FDMA430NZ
      DISTI # FDMA430NZ
      ON SemiconductorTransistor: N-MOSFET,unipolar,30V,5A,2.4W,MicroFET1615
      • 500:$0.3300
      • 100:$0.3600
      • 25:$0.3900
      • 5:$0.5000
      • 1:$0.6200
      FDMA430NZ
      DISTI # 1611453RL
      ON SemiconductorMOSFET, N
      RoHS: Compliant
      0
      • 3000:$0.3130
      • 1000:$0.3700
      • 100:$0.4620
      • 10:$0.7160
      • 1:$0.8610
      FDMA430NZ
      DISTI # 2371485
      ON SemiconductorTRANSISTOR, FULL REEL
      RoHS: Compliant
      0
      • 30000:$0.3450
      • 15000:$0.3530
      • 6000:$0.3670
      • 3000:$0.3940
      FDMA430NZ
      DISTI # 1611453
      ON SemiconductorMOSFET, N
      RoHS: Compliant
      2954
      • 3000:$0.3130
      • 1000:$0.3700
      • 100:$0.4620
      • 10:$0.7160
      • 1:$0.8610
      FDMA430NZ
      DISTI # 1611453
      ON SemiconductorMOSFET, N6989
      • 500:£0.1980
      • 250:£0.2150
      • 100:£0.2310
      • 10:£0.3990
      • 1:£0.4940
      画像 モデル 説明
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      Mfr.#: SN74LVC1G175DCKR

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      Mfr.#: SN74LVC1G02DCKR

      OMO.#: OMO-SN74LVC1G02DCKR

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      TPS62130RGTR

      Mfr.#: TPS62130RGTR

      OMO.#: OMO-TPS62130RGTR

      Switching Voltage Regulators 3-17V 3A SD Cnvrtr
      B39242B9413K610

      Mfr.#: B39242B9413K610

      OMO.#: OMO-B39242B9413K610

      Signal Conditioning CSSP3 B9413
      HK10056N8J-T

      Mfr.#: HK10056N8J-T

      OMO.#: OMO-HK10056N8J-T

      Fixed Inductors 0402 6.8nH 250mOhms +/-5%Tol 300mA HiQ
      ZXT13P12DE6TA

      Mfr.#: ZXT13P12DE6TA

      OMO.#: OMO-ZXT13P12DE6TA-DIODES

      ブランドニューオリジナル
      CRCW0201100KFKED

      Mfr.#: CRCW0201100KFKED

      OMO.#: OMO-CRCW0201100KFKED-VISHAY-DALE

      Thick Film Resistors - SMD 1/20watt 100Kohms 1% 100ppm
      可用性
      ストック:
      Available
      注文中:
      1990
      数量を入力してください:
      FDMA430NZの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
      参考価格(USD)
      単価
      小計金額
      1
      $0.56
      $0.56
      10
      $0.46
      $4.65
      100
      $0.30
      $30.00
      1000
      $0.24
      $240.00
      2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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