SSM6N7002FUTE85LF

Product Attribute

Attribute Value

Manufacturer:

Toshiba

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-363-6

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

200 mA

Rds On - Drain-Source Resistance:

3.3 Ohms

Vgs th - Gate-Source Threshold Voltage:

2.5 V

Vgs - Gate-Source Voltage:

20 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

300 mW

Configuration:

Dual

Channel Mode:

Enhancement

Packaging:

Reel

Height:

0.9 mm

Length:

2 mm

Product:

MOSFET Small Signal

Series:

SSM6N7002

Transistor Type:

2 N-Channel

Width:

1.25 mm

Brand:

Toshiba

Forward Transconductance - Min:

170 mS

Fall Time:

72 ns

Product Type:

MOSFET

Rise Time:

72 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

69 ns

Typical Turn-On Delay Time:

18 ns

Unit Weight:

0.000265 oz

Tags

SSM6N7002F, SSM6N7, SSM6N, SSM6, SSM