STB23NM60ND

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

D2PAK-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

19.5 A

Rds On - Drain-Source Resistance:

180 mOhms

Vgs th - Gate-Source Threshold Voltage:

3 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

69 nC

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

150 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

4.6 mm

Length:

10.4 mm

Series:

STB23NM60ND

Transistor Type:

1 N-Channel Power MOSFET

Width:

9.35 mm

Brand:

STMicroelectronics

Fall Time:

42 ns

Product Type:

MOSFET

Rise Time:

19 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

92 ns

Typical Turn-On Delay Time:

21 ns

Unit Weight:

0.139332 oz

Tags

STB23NM, STB23N, STB23, STB2, STB