IPW60R080P7XKSA1

IPW60R080P7XKSA1
Mfr. #:
IPW60R080P7XKSA1
メーカー:
Infineon Technologies
説明:
MOSFET HIGH POWER_NEW
ライフサイクル:
メーカー新製品
データシート:
IPW60R080P7XKSA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
IPW60R080P7XKSA1 詳しくは
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
スルーホール
パッケージ/ケース:
TO-247-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
600 V
Id-連続ドレイン電流:
37 A
Rds On-ドレイン-ソース抵抗:
69 mOhms
Vgs th-ゲート-ソースしきい値電圧:
3 V
Vgs-ゲート-ソース間電圧:
20 V
Qg-ゲートチャージ:
51 nC
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
129 W
構成:
独身
チャネルモード:
強化
商標名:
CoolMOS
包装:
チューブ
シリーズ:
CoolMOS P7
トランジスタタイプ:
1 N-Channel
ブランド:
インフィニオンテクノロジーズ
立ち下がり時間:
5 ns
製品タイプ:
MOSFET
立ち上がり時間:
10 ns
ファクトリーパックの数量:
240
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
70 ns
典型的なターンオン遅延時間:
15 ns
パーツ番号エイリアス:
IPW60R080P7 SP001647040
単位重量:
0.211644 oz
Tags
IPW60R0, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 80 mOhm 51 nC CoolMOS™ Power Mosfet - TO-247-3
***ical
Trans MOSFET N-CH 600V 37A
***i-Key
MOSFET N-CH 600V 37A TO247-3
***ronik
N-CH 600V 37A 80mOhm TO-247
***et Europe
HIGH POWER_NEW
***ark
Mosfet, N-Ch, 600V, 37A, 129W, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.069Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 37A, 129W, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.069ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:129W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CAN N, 600V, 37A, 129W, TO-247; Polarità Transistor:Canale N; Corrente Continua di Drain Id:37A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.069ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:129W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
モデル メーカー 説明 ストック 価格
IPW60R080P7XKSA1
DISTI # V36:1790_18196277
Infineon Technologies AGIPW60R080P7XKSA10
  • 240000:$2.6110
  • 120000:$2.6150
  • 24000:$3.0300
  • 2400:$3.8240
  • 240:$3.9600
IPW60R080P7XKSA1
DISTI # V99:2348_18196277
Infineon Technologies AGIPW60R080P7XKSA10
  • 240000:$2.8070
  • 120000:$2.8100
  • 24000:$3.1710
  • 2400:$3.8450
  • 240:$3.9600
IPW60R080P7XKSA1
DISTI # IPW60R080P7XKSA1-ND
Infineon Technologies AGMOSFET N-CH 600V 37A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube
433In Stock
  • 2640:$3.1304
  • 720:$3.9071
  • 240:$4.5897
  • 25:$5.2956
  • 10:$5.6020
  • 1:$6.2400
IPW60R080P7XKSA1
DISTI # SP001647040
Infineon Technologies AGHIGH POWER_NEW (Alt: SP001647040)
RoHS: Compliant
Min Qty: 1
Europe - 170
  • 1000:€2.3900
  • 500:€2.5900
  • 100:€2.6900
  • 50:€2.7900
  • 25:€2.8900
  • 10:€3.0900
  • 1:€3.2900
IPW60R080P7XKSA1
DISTI # IPW60R080P7XKSA1
Infineon Technologies AGHIGH POWER_NEW - Rail/Tube (Alt: IPW60R080P7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 1440:$2.7900
  • 2400:$2.7900
  • 960:$2.9900
  • 480:$3.0900
  • 240:$3.1900
IPW60R080P7XKSA1
DISTI # 93AC7139
Infineon Technologies AGMOSFET, N-CH, 600V, 37A, 129W, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:37A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.069ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes230
  • 500:$3.7600
  • 250:$4.1800
  • 100:$4.4100
  • 50:$4.6400
  • 25:$4.8600
  • 10:$5.0900
  • 1:$5.9900
IPW60R080P7XKSA1
DISTI # 726-IPW60R080P7XKSA1
Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant
929
  • 1:$5.9300
  • 10:$5.0400
  • 100:$4.3700
  • 250:$4.1400
  • 500:$3.7200
IPW60R080P7XKSA1
DISTI # XSKDRABV0050081
Infineon Technologies AG 
RoHS: Compliant
192 in Stock0 on Order
  • 192:$3.9300
  • 119:$4.2100
IPW60R080P7XKSA1
DISTI # 2986487
Infineon Technologies AGMOSFET, N-CH, 600V, 37A, 129W, TO-247
RoHS: Compliant
230
  • 100:$6.3400
  • 10:$7.3000
  • 1:$9.4800
IPW60R080P7XKSA1
DISTI # 2986487
Infineon Technologies AGMOSFET, N-CH, 600V, 37A, 129W, TO-247230
  • 500:£2.7000
  • 250:£3.0000
  • 100:£3.1700
  • 10:£3.6500
  • 1:£4.7600
画像 モデル 説明
1EDN7550BXTSA1

Mfr.#: 1EDN7550BXTSA1

OMO.#: OMO-1EDN7550BXTSA1

Gate Drivers DRIVER IC
UCC27714DR

Mfr.#: UCC27714DR

OMO.#: OMO-UCC27714DR

Gate Drivers HV Gate Driver
DZ9F16S92-7

Mfr.#: DZ9F16S92-7

OMO.#: OMO-DZ9F16S92-7

Zener Diodes Zerner Diode Ultra-Small SOD923
IPW60R070CFD7XKSA1

Mfr.#: IPW60R070CFD7XKSA1

OMO.#: OMO-IPW60R070CFD7XKSA1

MOSFET HIGH POWER_NEW
NVMFS6H818NT1G

Mfr.#: NVMFS6H818NT1G

OMO.#: OMO-NVMFS6H818NT1G

MOSFET TRENCH 8 80V NFET
EMHS800ARA241MKG5S

Mfr.#: EMHS800ARA241MKG5S

OMO.#: OMO-EMHS800ARA241MKG5S

Aluminum Electrolytic Capacitors - SMD 240uF 20% 80V AEC-Q200
C1206C104KARECAUTO

Mfr.#: C1206C104KARECAUTO

OMO.#: OMO-C1206C104KARECAUTO

Multilayer Ceramic Capacitors MLCC - SMD/SMT 250V 0.1uF X7R 1206 10% AEC-Q200
DZ9F16S92-7

Mfr.#: DZ9F16S92-7

OMO.#: OMO-DZ9F16S92-7-DIODES

DIODE ZENER 16V 200MW SOD923
IPW60R070CFD7XKSA1

Mfr.#: IPW60R070CFD7XKSA1

OMO.#: OMO-IPW60R070CFD7XKSA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 600V TO247-3
EMHS800ARA241MKG5S

Mfr.#: EMHS800ARA241MKG5S

OMO.#: OMO-EMHS800ARA241MKG5S-UNITED-CHEMI-CON

Aluminum Electrolytic Capacitors - SMD 240uF 20% 80V AEC-Q200
可用性
ストック:
349
注文中:
2332
数量を入力してください:
IPW60R080P7XKSA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$5.93
$5.93
10
$5.04
$50.40
100
$4.37
$437.00
250
$4.14
$1 035.00
500
$3.72
$1 860.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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