FQI4N20TU

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-262-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

200 V

Id - Continuous Drain Current:

3.6 A

Rds On - Drain-Source Resistance:

1.4 Ohms

Vgs - Gate-Source Voltage:

30 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

3.13 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

7.88 mm

Length:

10.29 mm

Transistor Type:

1 N-Channel

Width:

4.83 mm

Brand:

ON Semiconductor / Fairchild

Fall Time:

25 ns

Product Type:

MOSFET

Rise Time:

50 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

7 ns

Typical Turn-On Delay Time:

7 ns

Unit Weight:

0.084199 oz

Tags

FQI4N20T, FQI4N20, FQI4N2, FQI4N, FQI4, FQI