SSM6J205FE

Product Attribute

Attribute Value

Manufacturer:

Toshiba

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

ES6-6

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

80 mA

Rds On - Drain-Source Resistance:

234 mOhms

Vgs - Gate-Source Voltage:

8 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

500 mW (1/2 W)

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

0.55 mm

Length:

1.6 mm

Product:

MOSFET Small Signal

Series:

SSM6J205

Transistor Type:

1 P-Channel

Width:

1.2 mm

Brand:

Toshiba

Product Type:

MOSFET

Factory Pack Quantity:

8000

Subcategory:

MOSFETs

Unit Weight:

0.001270 oz

Tags

SSM6J205, SSM6J20, SSM6J2, SSM6J, SSM6, SSM