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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| BSP296E6327 DISTI # BSP296INTR-ND | Infineon Technologies AG | MOSFET N-CH 100V 1.1A SOT223 RoHS: Not compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP296E6327 DISTI # BSP296INCT-ND | Infineon Technologies AG | MOSFET N-CH 100V 1.1A SOT223 RoHS: Not compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSP296L6327HTSA1 DISTI # BSP296L6327HTSA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 1.1A SOT-223 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP296E6327 DISTI # 726-BSP296E6327 | Infineon Technologies AG | MOSFET N-Ch 100V 1.1A SOT-223-3 RoHS: Not compliant | 0 | |
| BSP296E6327 | Siemens | Power Field-Effect Transistor, 1A I(D), 100V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | Europe - 2545 | |
| BSP296E6327 | Infineon Technologies AG | INSTOCK | 525 | |
| BSP296E6327-01 | Infineon Technologies AG | INSTOCK | 88 | |
| BSP296-E6327 | siem97 | 10352 |
| 画像 | モデル | 説明 |
|---|---|---|
|
Mfr.#: BSP297 H6327 OMO.#: OMO-BSP297-H6327 |
MOSFET N-Ch 200V 660mA SOT-223-3 |
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Mfr.#: BSP299H6327XUSA1 OMO.#: OMO-BSP299H6327XUSA1 |
MOSFET N-Ch 500V 400mA SOT-223-3 |
|
Mfr.#: BSP296 E6327 OMO.#: OMO-BSP296-E6327-1190 |
ブランドニューオリジナル |
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Mfr.#: BSP296 L6433 OMO.#: OMO-BSP296-L6433-1190 |
MOSFET N-Ch 100V 1.1A SOT-223-3 |
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Mfr.#: BSP296NH6327 OMO.#: OMO-BSP296NH6327-1190 |
MOSFET, N-CH, 100V, 1.2A, SOT-223-4 |
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Mfr.#: BSP298E-6327 OMO.#: OMO-BSP298E-6327-1190 |
ブランドニューオリジナル |
|
Mfr.#: BSP298L6327HUSA1 |
MOSFET N-CH 400V 500MA SOT-223 |
|
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Mfr.#: BSP299L6327HUSA1 |
MOSFET N-CH 500V 400MA SOT-223 |
|
|
Mfr.#: BSP296 E6433 |
MOSFET N-CH 100V 1.1A SOT-223 |
|
|
Mfr.#: BSP299H6327XUSA1 |
IGBT Transistors MOSFET N-Ch 500V 400mA SOT-223-3 |
