DMN31D5UFZ-7B

DMN31D5UFZ-7B
Mfr. #:
DMN31D5UFZ-7B
Manufacturer:
Diodes Incorporated
Description:
MOSFET 30V N-Ch Enh Mode FET 12Vgss 1.05W
Lifecycle:
New from this manufacturer.
Datasheet:
DMN31D5UFZ-7B Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
DMN31D5UFZ-7B DatasheetDMN31D5UFZ-7B Datasheet (P4-P6)
ECAD Model:
More Information:
DMN31D5UFZ-7B more Information
Product Attribute
Attribute Value
Manufacturer:
Diodes Incorporated
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
X2-DFN0606-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
220 mA
Rds On - Drain-Source Resistance:
4.5 Ohms
Vgs th - Gate-Source Threshold Voltage:
1 V
Vgs - Gate-Source Voltage:
12 V
Qg - Gate Charge:
350 pC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
393 mW
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Series:
DMN31
Transistor Type:
1 N-Channel
Brand:
Diodes Incorporated
Fall Time:
6.9 ns
Product Type:
MOSFET
Rise Time:
2 ns
Factory Pack Quantity:
10000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
20 ns
Typical Turn-On Delay Time:
3.1 ns
Tags
DMN31D5U, DMN31D5, DMN31D, DMN31, DMN3, DMN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
DMxx Enhancement Mode MOSFETs
Diode Inc. DMxx Enhancement Mode MOSFETs are designed to minimize on-state resistance (RDS(ON)). They maintain superior switching performance, making them ideal for high-efficiency power management applications. The DMN31D5UFZ and DMN2990UFZ are N-Channel enhancement mode MOSFETs and the DMP32D9UFZ is a P-Channel Enhancement Mode MOSFET.Learn More
Image Part # Description
93AA46BT-I/SN

Mfr.#: 93AA46BT-I/SN

OMO.#: OMO-93AA46BT-I-SN

EEPROM 64x16
IS37SML01G1-LLI

Mfr.#: IS37SML01G1-LLI

OMO.#: OMO-IS37SML01G1-LLI

NAND Flash 1G 3.3V 104MHz Serial NAND Flash
IS25LP016D-JULE-TR

Mfr.#: IS25LP016D-JULE-TR

OMO.#: OMO-IS25LP016D-JULE-TR

NOR Flash 16Mb QSPI, 8-pin USON 2x3mm, RoHS, T&R
CSD15380F3

Mfr.#: CSD15380F3

OMO.#: OMO-CSD15380F3

MOSFET 20V, N ch NexFET MOSFETG , single LGA0.6x0.7, 1460mOhm 3-PICOSTAR -55 to 150
NCP45524IMNTWG-L

Mfr.#: NCP45524IMNTWG-L

OMO.#: OMO-NCP45524IMNTWG-L

Power Switch ICs - Power Distribution NCP45524IMNTWG-L
LPC802M001JHI33E

Mfr.#: LPC802M001JHI33E

OMO.#: OMO-LPC802M001JHI33E

ARM Microcontrollers - MCU Cortex-M0 16KB 2KB I2c, SPI, 17 GPIO
IS37SML01G1-LLI

Mfr.#: IS37SML01G1-LLI

OMO.#: OMO-IS37SML01G1-LLI-INTEGRATED-SILICON-SOLUTION

IC FLASH 1G SPI 104MHZ 8WSON
LPC802M001JHI33E

Mfr.#: LPC802M001JHI33E

OMO.#: OMO-LPC802M001JHI33E-NXP-SEMICONDUCTORS

IC MCU 32BIT 16KB FLASH 33HVQFN
LP5910-1.8DRVR

Mfr.#: LP5910-1.8DRVR

OMO.#: OMO-LP5910-1-8DRVR-TEXAS-INSTRUMENTS

LDO Voltage Regulators Ultra Low-Noise, 300-mA Linear Regulator for RF/Analog Circuits 6-SON -40 to 125
INA233AIDGSR

Mfr.#: INA233AIDGSR

OMO.#: OMO-INA233AIDGSR-TEXAS-INSTRUMENTS

INA233AIDGSR
Availability
Stock:
27
On Order:
2010
Enter Quantity:
Current price of DMN31D5UFZ-7B is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.34
$0.34
10
$0.27
$2.66
100
$0.14
$14.40
1000
$0.11
$108.00
2500
$0.09
$232.50
Start with
Newest Products
Top