DN2535N5-G

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

350 V

Id - Continuous Drain Current:

500 mA

Rds On - Drain-Source Resistance:

25 Ohms

Vgs - Gate-Source Voltage:

20 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

15 W

Configuration:

Single

Channel Mode:

Depletion

Packaging:

Tube

Height:

9.02 mm

Length:

10.67 mm

Transistor Type:

1 N-Channel

Width:

4.83 mm

Brand:

Microchip Technology

Forward Transconductance - Min:

325 mS

Fall Time:

20 ns

Product Type:

MOSFET

Rise Time:

15 ns

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

15 ns

Typical Turn-On Delay Time:

10 ns

Unit Weight:

0.211644 oz

Tags

DN2535N, DN2535, DN253, DN25, DN2